Ferroelectric and piezoelectric properties of MOCVD Pb(Mg1/3Nb2/3)O3-PbTiO3 epitaxial thin films

P. K. Baumann; G. R. Bai; S. K. Streiffer; O. Auciello; K. Ghosh; S. Stemmer; A. Munkholm; Carol Thompson; D. J. Kim; J. P. Maria; A. I. Kingon

Ferroelectric and piezoelectric properties of MOCVD Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ epitaxial thin films

P. K. Baumann, G. R. Bai, S. K. Streiffer, O. Auciello, K. Ghosh, S. Stemmer, A. Munkholm, Carol Thompson, D. J. Kim, J. P. Maria, A. I. Kingon

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

We have grown epitaxial Pb(Mg_1/3Nb_2/3)O₃ (PMN) and (1-x)(Pb(Mg_1/3Nb_2/3)O₃)-x(PbTiO₃) (PMN-PT) thin films by metalorganic chemical vapor deposition at 700 - 780°C on (100) SrTiO₃ and SrRuO₃/SrTiO₃ substrates. The zero-bias permittivity and loss measured at room temperature and 10 kHz for 220 nm thick pure PMN films were 900 and 1.5%, respectively. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all specimens. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with P_r≈18μC/cm² was obtained. Initial piezoresponse data are discussed.

Original language	English
Pages (from-to)	517-522
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	596
State	Published - 2000
Externally published	Yes
Event	Ferroelectric Thin Films VIII - Boston, MA, USA Duration: Nov 29 1999 → Dec 2 1999

Cite this

@article{ac477e0ac06e4c4b88916dddffbea6ad,

title = "Ferroelectric and piezoelectric properties of MOCVD Pb(Mg1/3Nb2/3)O3-PbTiO3 epitaxial thin films",

abstract = "We have grown epitaxial Pb(Mg1/3Nb2/3)O3 (PMN) and (1-x)(Pb(Mg1/3Nb2/3)O3)-x(PbTiO3) (PMN-PT) thin films by metalorganic chemical vapor deposition at 700 - 780°C on (100) SrTiO3 and SrRuO3/SrTiO3 substrates. The zero-bias permittivity and loss measured at room temperature and 10 kHz for 220 nm thick pure PMN films were 900 and 1.5%, respectively. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all specimens. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with Pr≈18μC/cm2 was obtained. Initial piezoresponse data are discussed.",

author = "Baumann, {P. K.} and Bai, {G. R.} and Streiffer, {S. K.} and O. Auciello and K. Ghosh and S. Stemmer and A. Munkholm and Carol Thompson and Kim, {D. J.} and Maria, {J. P.} and Kingon, {A. I.}",

year = "2000",

language = "English",

volume = "596",

pages = "517--522",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Ferroelectric Thin Films VIII ; Conference date: 29-11-1999 Through 02-12-1999",

}

TY - JOUR

T1 - Ferroelectric and piezoelectric properties of MOCVD Pb(Mg1/3Nb2/3)O3-PbTiO3 epitaxial thin films

AU - Baumann, P. K.

AU - Bai, G. R.

AU - Streiffer, S. K.

AU - Auciello, O.

AU - Ghosh, K.

AU - Stemmer, S.

AU - Munkholm, A.

AU - Thompson, Carol

AU - Kim, D. J.

AU - Maria, J. P.

AU - Kingon, A. I.

PY - 2000

Y1 - 2000

N2 - We have grown epitaxial Pb(Mg1/3Nb2/3)O3 (PMN) and (1-x)(Pb(Mg1/3Nb2/3)O3)-x(PbTiO3) (PMN-PT) thin films by metalorganic chemical vapor deposition at 700 - 780°C on (100) SrTiO3 and SrRuO3/SrTiO3 substrates. The zero-bias permittivity and loss measured at room temperature and 10 kHz for 220 nm thick pure PMN films were 900 and 1.5%, respectively. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all specimens. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with Pr≈18μC/cm2 was obtained. Initial piezoresponse data are discussed.

AB - We have grown epitaxial Pb(Mg1/3Nb2/3)O3 (PMN) and (1-x)(Pb(Mg1/3Nb2/3)O3)-x(PbTiO3) (PMN-PT) thin films by metalorganic chemical vapor deposition at 700 - 780°C on (100) SrTiO3 and SrRuO3/SrTiO3 substrates. The zero-bias permittivity and loss measured at room temperature and 10 kHz for 220 nm thick pure PMN films were 900 and 1.5%, respectively. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all specimens. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with Pr≈18μC/cm2 was obtained. Initial piezoresponse data are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0033695745&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033695745

SN - 0272-9172

VL - 596

SP - 517

EP - 522

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Ferroelectric Thin Films VIII

Y2 - 29 November 1999 through 2 December 1999

ER -

Ferroelectric and piezoelectric properties of MOCVD Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ epitaxial thin films

Abstract

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