Ferroelastic Domain-Induced Electronic Modulation in Halide Perovskites

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Abstract

Lead halide perovskites have emerged as promising materials for optoelectronic applications due to their exceptional properties. In the all-inorganic CsPbBr3perovskites, ferroelastic domains formed during phase transitions enhance bulk transport and emissive efficiency. However, the microscopic mechanisms governing carrier dynamics remain poorly understood. In this study, we employ cathodoluminescence (CL) and micro-Raman spectroscopy to image and investigate the electronic properties of the ferroelastic domain walls in CsPbBr3single crystals. CL measurements reveal a reduced emissive yield and a slight redshift in emission at the domain walls. Further, micro-Raman studies provide spatially resolved mapping of vibrational modes, exhibiting second-order phonon modes localized at the domain boundaries. Our findings suggest that electron–phonon coupling at the twin domain walls plays a critical role in facilitating efficient charge separation, thereby improving the optoelectronic performance of the CsPbBr3perovskites.

Original languageEnglish
Pages (from-to)54148-54156
Number of pages9
JournalACS Applied Materials and Interfaces
Volume17
Issue number38
DOIs
StatePublished - Sep 24 2025

Funding

This work was supported by the Center for Nanophase Materials Sciences (CNMS), which is a U.S. Department of Energy, Office of Science User Facility at Oak Ridge National Laboratory, the Natural Sciences and Engineering Research Council of Canada (NSERC DG, RGPIN-2023-04416), and the U.S. Office of Naval Research (ONR grant N00014-21-1-2085). The authors acknowledge useful discussion with Roger Proksch (Asylum Research) regarding the VERO PFM results. The authors also thank Vidhi Chauhan for help in drawing the crystal structure.

Keywords

  • cathodoluminescence
  • domain walls
  • electron−phonon coupling
  • ferroelastic
  • halide perovskites

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