Faulty field evaporation at di-vacancies in {222} tungsten

K. Stiller; H. O. Andrén

doi:10.1016/0039-6028(82)90689-6

Faulty field evaporation at di-vacancies in {222} tungsten

K. Stiller
, H. O. Andrén

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Faulty field evaporation sequences, creating artefact vacancies, were observed during field-ion microscopy of tungsten specimens which had previously been irradiated in situ with 180-230 keV Xe⁺ ions at 80 K. Such sequences were observed for atoms in {222} planes which were neighbours to 〈111〉 di-vacancies. The faulty evaporation gave rise to a tri- or quadri-vacancy contrast instead of the expected di-vacancy contrast. This effect can be explained by the influence of a reduced atomic binding energy on the probability for field evaporation.

Original language	English
Pages (from-to)	L57-L61
Journal	Surface Science
Volume	114
Issue number	2-3
DOIs	https://doi.org/10.1016/0039-6028(82)90689-6
State	Published - Feb 1 1982
Externally published	Yes

Funding

Discussionsw ith Dr. H: Norden are gratefully acknowledgedT. his work was supportedb y the SwedishN atural ScienceR esearchC ouncil.

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10.1016/0039-6028(82)90689-6

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title = "Faulty field evaporation at di-vacancies in \{222\} tungsten",

abstract = "Faulty field evaporation sequences, creating artefact vacancies, were observed during field-ion microscopy of tungsten specimens which had previously been irradiated in situ with 180-230 keV Xe+ ions at 80 K. Such sequences were observed for atoms in \{222\} planes which were neighbours to 〈111〉 di-vacancies. The faulty evaporation gave rise to a tri- or quadri-vacancy contrast instead of the expected di-vacancy contrast. This effect can be explained by the influence of a reduced atomic binding energy on the probability for field evaporation.",

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AU - Stiller, K.

AU - Andrén, H. O.

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N2 - Faulty field evaporation sequences, creating artefact vacancies, were observed during field-ion microscopy of tungsten specimens which had previously been irradiated in situ with 180-230 keV Xe+ ions at 80 K. Such sequences were observed for atoms in {222} planes which were neighbours to 〈111〉 di-vacancies. The faulty evaporation gave rise to a tri- or quadri-vacancy contrast instead of the expected di-vacancy contrast. This effect can be explained by the influence of a reduced atomic binding energy on the probability for field evaporation.

AB - Faulty field evaporation sequences, creating artefact vacancies, were observed during field-ion microscopy of tungsten specimens which had previously been irradiated in situ with 180-230 keV Xe+ ions at 80 K. Such sequences were observed for atoms in {222} planes which were neighbours to 〈111〉 di-vacancies. The faulty evaporation gave rise to a tri- or quadri-vacancy contrast instead of the expected di-vacancy contrast. This effect can be explained by the influence of a reduced atomic binding energy on the probability for field evaporation.

UR - https://www.scopus.com/pages/publications/49049136626

U2 - 10.1016/0039-6028(82)90689-6

DO - 10.1016/0039-6028(82)90689-6

M3 - Article

AN - SCOPUS:49049136626

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VL - 114

SP - L57-L61

JO - Surface Science

JF - Surface Science

IS - 2-3

ER -

Faulty field evaporation at di-vacancies in {222} tungsten

Abstract

Funding

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