Fast oxide-ion conduction in intergrowth structures

J. B. Goodenough; A. Manthiram; P. Paranthaman; Y. S. Zhen

doi:10.1016/0167-2738(92)90096-8

Fast oxide-ion conduction in intergrowth structures

J. B. Goodenough, A. Manthiram, P. Paranthaman, Y. S. Zhen

Nanomaterials Chemistry Group

Research output: Contribution to journal › Article › peer-review

77 Scopus citations

Abstract

Investigation of intergrowth structures consisting of perovskite blocks alternating with other blocks along the c-axis has been found to offer a novel "doping strategy" for fast oxide-ion conduction at significantly lower temperatures. Barium indium oxides such as Ba₃In₂MO₈ (M = Zr, Hf and Ce) have an intergrowth structure in which two octahedral layers alternate with one tetrahedral layer along the c-axis. These oxides exhibit remarkable O^2--ion conduction at 400°C with a low activation energy E_a≲0.6eV. A variety of substitution on the vanadium site in Bi₄V_2-yM_yO_11-δ has led to the identification of fast O^2-- ion conduction at y≈0.2 for M = Ti and Nb in addition to that found with M = Cu by French group. Observation of fast oxide-ion conduction at T<400°C brings renewed interest to the field of oxide-ion electrolytes.

Original language	English
Pages (from-to)	105-109
Number of pages	5
Journal	Solid State Ionics
Volume	52
Issue number	1-3
DOIs	https://doi.org/10.1016/0167-2738(92)90096-8
State	Published - May 1992

Funding

Financial support for this researchb y the R.A. Welch Foundation, Houston, TX is gratefully acknowledged.

Access to Document

10.1016/0167-2738(92)90096-8

Cite this

@article{d536edef688a424c967d5286cebbd8f2,

title = "Fast oxide-ion conduction in intergrowth structures",

abstract = "Investigation of intergrowth structures consisting of perovskite blocks alternating with other blocks along the c-axis has been found to offer a novel {"}doping strategy{"} for fast oxide-ion conduction at significantly lower temperatures. Barium indium oxides such as Ba3In2MO8 (M = Zr, Hf and Ce) have an intergrowth structure in which two octahedral layers alternate with one tetrahedral layer along the c-axis. These oxides exhibit remarkable O2--ion conduction at 400°C with a low activation energy Ea≲0.6eV. A variety of substitution on the vanadium site in Bi4V2-yMyO11-δ has led to the identification of fast O2-- ion conduction at y≈0.2 for M = Ti and Nb in addition to that found with M = Cu by French group. Observation of fast oxide-ion conduction at T<400°C brings renewed interest to the field of oxide-ion electrolytes.",

author = "Goodenough, \{J. B.\} and A. Manthiram and P. Paranthaman and Zhen, \{Y. S.\}",

year = "1992",

month = may,

doi = "10.1016/0167-2738(92)90096-8",

language = "English",

volume = "52",

pages = "105--109",

journal = "Solid State Ionics",

issn = "0167-2738",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - Fast oxide-ion conduction in intergrowth structures

AU - Goodenough, J. B.

AU - Manthiram, A.

AU - Paranthaman, P.

AU - Zhen, Y. S.

PY - 1992/5

Y1 - 1992/5

N2 - Investigation of intergrowth structures consisting of perovskite blocks alternating with other blocks along the c-axis has been found to offer a novel "doping strategy" for fast oxide-ion conduction at significantly lower temperatures. Barium indium oxides such as Ba3In2MO8 (M = Zr, Hf and Ce) have an intergrowth structure in which two octahedral layers alternate with one tetrahedral layer along the c-axis. These oxides exhibit remarkable O2--ion conduction at 400°C with a low activation energy Ea≲0.6eV. A variety of substitution on the vanadium site in Bi4V2-yMyO11-δ has led to the identification of fast O2-- ion conduction at y≈0.2 for M = Ti and Nb in addition to that found with M = Cu by French group. Observation of fast oxide-ion conduction at T<400°C brings renewed interest to the field of oxide-ion electrolytes.

AB - Investigation of intergrowth structures consisting of perovskite blocks alternating with other blocks along the c-axis has been found to offer a novel "doping strategy" for fast oxide-ion conduction at significantly lower temperatures. Barium indium oxides such as Ba3In2MO8 (M = Zr, Hf and Ce) have an intergrowth structure in which two octahedral layers alternate with one tetrahedral layer along the c-axis. These oxides exhibit remarkable O2--ion conduction at 400°C with a low activation energy Ea≲0.6eV. A variety of substitution on the vanadium site in Bi4V2-yMyO11-δ has led to the identification of fast O2-- ion conduction at y≈0.2 for M = Ti and Nb in addition to that found with M = Cu by French group. Observation of fast oxide-ion conduction at T<400°C brings renewed interest to the field of oxide-ion electrolytes.

UR - https://www.scopus.com/pages/publications/0026867114

U2 - 10.1016/0167-2738(92)90096-8

DO - 10.1016/0167-2738(92)90096-8

M3 - Article

AN - SCOPUS:0026867114

SN - 0167-2738

VL - 52

SP - 105

EP - 109

JO - Solid State Ionics

JF - Solid State Ionics

IS - 1-3

ER -

Fast oxide-ion conduction in intergrowth structures

Abstract

Funding

Access to Document

Other files and links

Fingerprint

Cite this