Fast oxide-ion conduction in intergrowth structures

J. B. Goodenough, A. Manthiram, P. Paranthaman, Y. S. Zhen

Research output: Contribution to journalArticlepeer-review

76 Scopus citations

Abstract

Investigation of intergrowth structures consisting of perovskite blocks alternating with other blocks along the c-axis has been found to offer a novel "doping strategy" for fast oxide-ion conduction at significantly lower temperatures. Barium indium oxides such as Ba3In2MO8 (M = Zr, Hf and Ce) have an intergrowth structure in which two octahedral layers alternate with one tetrahedral layer along the c-axis. These oxides exhibit remarkable O2--ion conduction at 400°C with a low activation energy Ea≲0.6eV. A variety of substitution on the vanadium site in Bi4V2-yMyO11-δ has led to the identification of fast O2-- ion conduction at y≈0.2 for M = Ti and Nb in addition to that found with M = Cu by French group. Observation of fast oxide-ion conduction at T<400°C brings renewed interest to the field of oxide-ion electrolytes.

Original languageEnglish
Pages (from-to)105-109
Number of pages5
JournalSolid State Ionics
Volume52
Issue number1-3
DOIs
StatePublished - May 1992

Funding

Financial support for this researchb y the R.A. Welch Foundation, Houston, TX is gratefully acknowledged.

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