Faceting of stepped silicon (113) surfaces: Self assembly of nanoscale gratings

S. G.J. Mochrie, S. Song, Mirang Yoon, D. L. Abernathy, G. B. Stephenson

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Abstract

Synchrotron X-ray scattering studies of the phase behavior and phase transformations of stepped Si(113) surfaces tilted towards [001] are reviewed for temperatures between 300 and 1500 K. At the highest temperatures, these surfaces are uniformly stepped, and the intensity of near-specularly scattered X-rays increases with decreasing temperature. This is two-dimensional critical opalescence, which foreshadows a faceting transformation. At temperatures below the faceting transformation, (113) facets appear in coexistence with a stepped phase, leading to a mesoscopically grooved morphology. Both the misorientation angle at the phase boundary separating one- and two-phase regions and the intensity of the near-specular diffuse scattering may be described as power laws versus reduced temperature. This can be understood qualitatively on the basis of a mean-field theory, which incorporates an attractive interaction between steps. At lower temperatures, the surfaces are completely faceted, comprising (114) and (113) facets. The kinetics of faceting is also described. Following a quench from a one-phase region of the phase diagram into a two-phase region, the grooved superstructure forms and subsequently coarsens in time. For times between one and several hundred seconds, the surface morphology is self-similar at different times, with a characteristic groove size that evolves as a power law versus time. At later times, the groove size approaches a limiting value, as a result of elastic effects.

Original languageEnglish
Pages (from-to)105-125
Number of pages21
JournalPhysica B: Physics of Condensed Matter
Volume221
Issue number1-4
DOIs
StatePublished - Apr 2 1996
Externally publishedYes

Funding

S.G.J.M. and D.L.A. are especially grateful to R. Birgeneau, K. Blum, S. Ceyer, D. Gibbs, and G. Held for their invaluable assistance in the conception, design and implementation of the apparatus described in Section 2. Funding for the apparatus was provided, in part, by the Joint Services Electronics Program, the National Science Foundation, the AT&T New Research Fund, and IBM. We would also like to thank N.C. Bartelt, L. Berman, B. Carvalho, D. Gibbs, N. Goldenfeld, M. Grant, M. Kardar, B. McClain, W.F. Saam, M. Seul, J. Shore, G.M. Watson, and A. Zangwill for enlightening comments. The research described in the present paper was supported by the NSF (DMR 9119675 and DMR 9423641 ) and the JSEP (DAAL-03-94-C-0001 and DAAH-95 - 1-0038 ). M. Y. acknowledges the support of a JSEP Fellowship. X20 is supported by the NSF (DMR-9400334) and by IBM. X25 and the NSLS are supported by the DOE (DE-AC0276CH00016).

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