Abstract
The semiconductor microcylinder lasers with whispering-gallery modes are expected to be with execllent performances, such as low threshold current density and high efficiency. The spontaneous emission characteristics of microcylinder laser due to microcavity effect is strongly modified. Another excellence of whispering-gallery mode devices is that the probability of planar integration with waveguide devices and detectors. In this work InGaAs/InGaAsP microcylinder laser was fabricated by wet chemical etching. The diameter of the microcylinder is about 10μm or 5 μm. With our improved processing the microcylinder was with smooth side wall, ensuring high Q-factor. The lasing at about 1.5μm was observed at low temperature.
Original language | English |
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Pages (from-to) | 360-362 |
Number of pages | 3 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 4601 |
DOIs | |
State | Published - 2001 |
Externally published | Yes |
Keywords
- Lasers
- Microcavity
- Microcylinder