Fabrication of InGaAs/InGaAsP microcylinder by wet chemical etching

Yu Zhai Pan; Yong Qiang Ning; Li Qin; Hui Suo; Yun Liu; Li Jun Wang

doi:10.1117/12.444735

Fabrication of InGaAs/InGaAsP microcylinder by wet chemical etching

Yu Zhai Pan, Yong Qiang Ning, Li Qin, Hui Suo, Yun Liu, Li Jun Wang

Research output: Contribution to journal › Article › peer-review

Abstract

The semiconductor microcylinder lasers with whispering-gallery modes are expected to be with execllent performances, such as low threshold current density and high efficiency. The spontaneous emission characteristics of microcylinder laser due to microcavity effect is strongly modified. Another excellence of whispering-gallery mode devices is that the probability of planar integration with waveguide devices and detectors. In this work InGaAs/InGaAsP microcylinder laser was fabricated by wet chemical etching. The diameter of the microcylinder is about 10μm or 5 μm. With our improved processing the microcylinder was with smooth side wall, ensuring high Q-factor. The lasing at about 1.5μm was observed at low temperature.

Original language	English
Pages (from-to)	360-362
Number of pages	3
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4601
DOIs	https://doi.org/10.1117/12.444735
State	Published - 2001
Externally published	Yes

Keywords

Lasers
Microcavity
Microcylinder

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10.1117/12.444735

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title = "Fabrication of InGaAs/InGaAsP microcylinder by wet chemical etching",

abstract = "The semiconductor microcylinder lasers with whispering-gallery modes are expected to be with execllent performances, such as low threshold current density and high efficiency. The spontaneous emission characteristics of microcylinder laser due to microcavity effect is strongly modified. Another excellence of whispering-gallery mode devices is that the probability of planar integration with waveguide devices and detectors. In this work InGaAs/InGaAsP microcylinder laser was fabricated by wet chemical etching. The diameter of the microcylinder is about 10μm or 5 μm. With our improved processing the microcylinder was with smooth side wall, ensuring high Q-factor. The lasing at about 1.5μm was observed at low temperature.",

keywords = "Lasers, Microcavity, Microcylinder",

author = "Pan, {Yu Zhai} and Ning, {Yong Qiang} and Li Qin and Hui Suo and Yun Liu and Wang, {Li Jun}",

year = "2001",

doi = "10.1117/12.444735",

language = "English",

volume = "4601",

pages = "360--362",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "Society of Photo-Optical Instrumentation Engineers",

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TY - JOUR

T1 - Fabrication of InGaAs/InGaAsP microcylinder by wet chemical etching

AU - Pan, Yu Zhai

AU - Ning, Yong Qiang

AU - Qin, Li

AU - Suo, Hui

AU - Liu, Yun

AU - Wang, Li Jun

PY - 2001

Y1 - 2001

N2 - The semiconductor microcylinder lasers with whispering-gallery modes are expected to be with execllent performances, such as low threshold current density and high efficiency. The spontaneous emission characteristics of microcylinder laser due to microcavity effect is strongly modified. Another excellence of whispering-gallery mode devices is that the probability of planar integration with waveguide devices and detectors. In this work InGaAs/InGaAsP microcylinder laser was fabricated by wet chemical etching. The diameter of the microcylinder is about 10μm or 5 μm. With our improved processing the microcylinder was with smooth side wall, ensuring high Q-factor. The lasing at about 1.5μm was observed at low temperature.

AB - The semiconductor microcylinder lasers with whispering-gallery modes are expected to be with execllent performances, such as low threshold current density and high efficiency. The spontaneous emission characteristics of microcylinder laser due to microcavity effect is strongly modified. Another excellence of whispering-gallery mode devices is that the probability of planar integration with waveguide devices and detectors. In this work InGaAs/InGaAsP microcylinder laser was fabricated by wet chemical etching. The diameter of the microcylinder is about 10μm or 5 μm. With our improved processing the microcylinder was with smooth side wall, ensuring high Q-factor. The lasing at about 1.5μm was observed at low temperature.

KW - Lasers

KW - Microcavity

KW - Microcylinder

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DO - 10.1117/12.444735

M3 - Article

AN - SCOPUS:0035772676

SN - 0277-786X

VL - 4601

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EP - 362

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Fabrication of InGaAs/InGaAsP microcylinder by wet chemical etching

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Keywords

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