Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

C. F. Lo; F. Ren; C. Y. Chang; S. J. Pearton; S. H. Chen; C. M. Chang; S. Y. Wang; J. I. Chyi; I. I. Kravchenko

doi:10.1116/1.3589808

Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

C. F. Lo, F. Ren, C. Y. Chang, S. J. Pearton, S. H. Chen, C. M. Chang, S. Y. Wang, J. I. Chyi, I. I. Kravchenko

Nanofabrication Research Laboratory

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In_0.52 Al_0.48As/ In_0.42 Ga _0.58 As_0.77Sb_0.23/In_0.53Ga _0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/ cm2 and a high dc current gain of 123.8 for a DHBT with a 0.65×8.65 μ m² emitter area were obtained. A unity gain cutoff frequency (f_T) of 260 GHz and a maximum oscillation frequency (fmax) of 485 GHz at J_C =302 kA/ cm2 were achieved.

Original language	English
Article number	031205
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	29
Issue number	3
DOIs	https://doi.org/10.1116/1.3589808
State	Published - May 2011

Funding

The work at UF is partially supported by the Office of Naval Research (ONR) under Contract No. 00075094 monitored by Dr. Chagaan Baatar, NSF under Contract No. ECCS 0901711 monitored by Dr. Yogesh B. Gianchandani, and by Superfund Basic Research Program Grant No. RO1ES015449. The work at National Central University is partially supported by the National Science Council, Taiwan R.O.C. under Contract No. NSC-96-2628-E-008-0072MY3. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy.

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title = "Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors",

abstract = "A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In0.52 Al0.48As/ In0.42 Ga 0.58 As0.77Sb0.23/In0.53Ga 0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/ cm2 and a high dc current gain of 123.8 for a DHBT with a 0.65×8.65 μ m2 emitter area were obtained. A unity gain cutoff frequency (fT) of 260 GHz and a maximum oscillation frequency (fmax) of 485 GHz at JC =302 kA/ cm2 were achieved.",

author = "Lo, {C. F.} and F. Ren and Chang, {C. Y.} and Pearton, {S. J.} and Chen, {S. H.} and Chang, {C. M.} and Wang, {S. Y.} and Chyi, {J. I.} and Kravchenko, {I. I.}",

year = "2011",

month = may,

doi = "10.1116/1.3589808",

language = "English",

volume = "29",

journal = "Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics",

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publisher = "American Institute of Physics",

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T1 - Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

AU - Lo, C. F.

AU - Ren, F.

AU - Chang, C. Y.

AU - Pearton, S. J.

AU - Chen, S. H.

AU - Chang, C. M.

AU - Wang, S. Y.

AU - Chyi, J. I.

AU - Kravchenko, I. I.

PY - 2011/5

Y1 - 2011/5

N2 - A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In0.52 Al0.48As/ In0.42 Ga 0.58 As0.77Sb0.23/In0.53Ga 0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/ cm2 and a high dc current gain of 123.8 for a DHBT with a 0.65×8.65 μ m2 emitter area were obtained. A unity gain cutoff frequency (fT) of 260 GHz and a maximum oscillation frequency (fmax) of 485 GHz at JC =302 kA/ cm2 were achieved.

AB - A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In0.52 Al0.48As/ In0.42 Ga 0.58 As0.77Sb0.23/In0.53Ga 0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/ cm2 and a high dc current gain of 123.8 for a DHBT with a 0.65×8.65 μ m2 emitter area were obtained. A unity gain cutoff frequency (fT) of 260 GHz and a maximum oscillation frequency (fmax) of 485 GHz at JC =302 kA/ cm2 were achieved.

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M3 - Article

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VL - 29

JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

IS - 3

M1 - 031205

ER -

Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

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