Abstract
Size selectable Ge nanoclusters are formed on Si using a buffer layer-assisted growth method. A condensed inert gas layer of xenon, with low surface free energy, was used as a buffer to prevent direct interactions of deposited Ge atoms with Si substrates during Ge nanocluster growth. The scanning tunneling microscope studies indicate absence of a strained wetting layer between Ge nanoclusters. These nanoclusters are substantially smaller and denser than the Ge hut clusters that are formed with the normal Stranski-Krastanov growth mode. The morphology of the nanoclusters can be tuned over a wide range, which is very desirable for studying the three-dimensional confinement effect.
Original language | English |
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Pages (from-to) | L803-L807 |
Journal | Surface Science |
Volume | 546 |
Issue number | 2-3 |
DOIs | |
State | Published - Dec 1 2003 |
Funding
This work was supported by ORNL under the LDRD Program, managed by UT-Battelle, LLC for the US Department of Energy under Contract #DE-AC05-00OR22725, and in part by the Petroleum Research Fund, administrated by the ACS (Grant # ACS-PRF#32916-AC5).
Keywords
- Clusters
- Evaporation and sublimation
- Germanium
- Growth
- Scanning tunneling microscopy
- Silicon