Fabrication of Ge nanoclusters on Si with a buffer layer-assisted growth method

K. Yoo, A. P. Li, Zhenyu Zhang, H. H. Weitering, F. Flack, M. G. Lagally, J. F. Wendelken

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22 Scopus citations

Abstract

Size selectable Ge nanoclusters are formed on Si using a buffer layer-assisted growth method. A condensed inert gas layer of xenon, with low surface free energy, was used as a buffer to prevent direct interactions of deposited Ge atoms with Si substrates during Ge nanocluster growth. The scanning tunneling microscope studies indicate absence of a strained wetting layer between Ge nanoclusters. These nanoclusters are substantially smaller and denser than the Ge hut clusters that are formed with the normal Stranski-Krastanov growth mode. The morphology of the nanoclusters can be tuned over a wide range, which is very desirable for studying the three-dimensional confinement effect.

Original languageEnglish
Pages (from-to)L803-L807
JournalSurface Science
Volume546
Issue number2-3
DOIs
StatePublished - Dec 1 2003

Funding

This work was supported by ORNL under the LDRD Program, managed by UT-Battelle, LLC for the US Department of Energy under Contract #DE-AC05-00OR22725, and in part by the Petroleum Research Fund, administrated by the ACS (Grant # ACS-PRF#32916-AC5).

Keywords

  • Clusters
  • Evaporation and sublimation
  • Germanium
  • Growth
  • Scanning tunneling microscopy
  • Silicon

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