Fabrication of epitaxial γ-Al2O3 and spinel NiAl2O4 films on SrTiO3 by pulsed laser ablation

Junsoo Shin; Amit Goyal; Karren More; Sung Hun Wee

doi:10.1016/j.jcrysgro.2008.10.046

Fabrication of epitaxial γ-Al₂O₃ and spinel NiAl₂O₄ films on SrTiO₃ by pulsed laser ablation

Junsoo Shin, Amit Goyal, Karren More, Sung Hun Wee

Center for Nanophase Matls Sciences

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Spinel γ-Al₂O₃ and NiAl₂O₄ thin films were grown on (0 0 1) SrTiO₃ substrates by pulsed laser deposition. The high quality of epitaxial growth and cube-on-cube orientation of the films were confirmed by X-ray diffraction and transmission electron microscopy. The growth of NiAl₂O₄ thin films is related to the reaction between sequentially deposited γ-Al₂O₃ and NiO layers. These films were grown using a unique "multi-target" approach.

Original language	English
Pages (from-to)	210-213
Number of pages	4
Journal	Journal of Crystal Growth
Volume	311
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.10.046
State	Published - Dec 15 2008

Funding

J. Shin and S. H. Wee would like to thank Oak Ridge Associated Universities for a postdoctoral fellowship. Research sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory (ORNL), managed by UT-Battelle, LLC for the US Department of Energy. Research supported in part by the Oak Ridge National Laboratory SHaRE User Facility, Division of Scientific User Facilities, Office of Basic Energy Science, US Department of Energy.

Funders	Funder number
Basic Energy Science
US Department of Energy
UT-Battelle
Oak Ridge Associated Universities
Oak Ridge National Laboratory

Keywords

A1. Crystal structure
A3. Pulsed laser deposition
B1. Aluminum oxide
B1. Spinel

Access to Document

10.1016/j.jcrysgro.2008.10.046

Cite this

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abstract = "Spinel γ-Al2O3 and NiAl2O4 thin films were grown on (0 0 1) SrTiO3 substrates by pulsed laser deposition. The high quality of epitaxial growth and cube-on-cube orientation of the films were confirmed by X-ray diffraction and transmission electron microscopy. The growth of NiAl2O4 thin films is related to the reaction between sequentially deposited γ-Al2O3 and NiO layers. These films were grown using a unique {"}multi-target{"} approach.",

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AU - Wee, Sung Hun

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