Fabrication and electrical properities of semiconducting yba ₂Cu ₃0 ₇-x thin film for application of ir sensors

YBajCua ₂Cu ₃O _7-x thin films were fabricated by the spin-coating method on SiO ₂/Si substrate using an alkoxide-based sol-gel method. The structural and electrical properties were investigated for various 1st annealing temperature. Due to the formation of the polycrystalline single phase, synthesis temperature was observed at around 72O ^°C - 800 ^°C. YBa ₂Cu ₃O _7-X thin films with the 1st annealing temperature of 450°C∼500°C showed the single XRD patterns without the second phase, such as YBa ₂CU ₄O ₈ The thickness of films was approximately 0.23 m∼0.27 pm. Aerage grain size, resistance and temperature coefficient of resistance (TCR) of YBa ₂CU ₃O ₇- _X thin films with the 1st annealing temperature of 500 ^°C were 0.27 rn, 59.7AuΩ and - 3.7%/K, respecvitely.