Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

Chien Fong Lo; Chih Yang Chang; S. H. Chen; C. M. Chang; S. Y. Wang; J. I. Chyi; I. I. Kravchenko; S. J. Pearton; F. Ren

doi:10.1149/1.3629960

Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

Chien Fong Lo
, Chih Yang Chang
, S. H. Chen
, C. M. Chang
, S. Y. Wang
, J. I. Chyi
, I. I. Kravchenko
, S. J. Pearton
, F. Ren

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In_0.52Al_0.48As/In_0.42Ga _0.58As_0.77Sb_0.23/In_0.53Ga _0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/cm²and a high dc current gain of 123.8 for a DHBT with a 0.65 x 8.65 μm² emitter area were obtained. A unity gain cut-off frequency (f_T) of 260 GHz and a maximum oscillation frequency (f_max) of 485 GHz at J_C = 302 kA/cm² were achieved.

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53
Publisher	Electrochemical Society Inc.
Pages	117-127
Number of pages	11
Edition	6
ISBN (Electronic)	9781607682608
ISBN (Print)	9781566779067
DOIs	https://doi.org/10.1149/1.3629960
State	Published - 2011
Event	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, United States Duration: Oct 9 2011 → Oct 14 2011

Publication series

Name	ECS Transactions
Number	6
Volume	41
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
Country/Territory	United States
City	Boston, MA
Period	10/9/11 → 10/14/11

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10.1149/1.3629960

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Lo, C. F., Chang, C. Y., Chen, S. H., Chang, C. M., Wang, S. Y., Chyi, J. I., Kravchenko, I. I., Pearton, S. J., & Ren, F. (2011). Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors. In State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 (6 ed., pp. 117-127). (ECS Transactions; Vol. 41, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/1.3629960

@inproceedings{f1935091d42e4b178cde154b12a62e10,

title = "Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors",

abstract = "A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In0.52Al0.48As/In0.42Ga 0.58As0.77Sb0.23/In0.53Ga 0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/cm2and a high dc current gain of 123.8 for a DHBT with a 0.65 x 8.65 μm2 emitter area were obtained. A unity gain cut-off frequency (fT) of 260 GHz and a maximum oscillation frequency (fmax) of 485 GHz at JC = 302 kA/cm2 were achieved.",

author = "Lo, \{Chien Fong\} and Chang, \{Chih Yang\} and Chen, \{S. H.\} and Chang, \{C. M.\} and Wang, \{S. Y.\} and Chyi, \{J. I.\} and Kravchenko, \{I. I.\} and Pearton, \{S. J.\} and F. Ren",

year = "2011",

doi = "10.1149/1.3629960",

language = "English",

isbn = "9781566779067",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "6",

pages = "117--127",

booktitle = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53",

edition = "6",

note = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",

}

Lo, CF, Chang, CY, Chen, SH, Chang, CM, Wang, SY, Chyi, JI, Kravchenko, II, Pearton, SJ & Ren, F 2011, Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors. in State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6 edn, ECS Transactions, no. 6, vol. 41, Electrochemical Society Inc., pp. 117-127, State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting, Boston, MA, United States, 10/9/11. https://doi.org/10.1149/1.3629960

Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors. / Lo, Chien Fong; Chang, Chih Yang; Chen, S. H. et al.
State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6. ed. Electrochemical Society Inc., 2011. p. 117-127 (ECS Transactions; Vol. 41, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

AU - Lo, Chien Fong

AU - Chang, Chih Yang

AU - Chen, S. H.

AU - Chang, C. M.

AU - Wang, S. Y.

AU - Chyi, J. I.

AU - Kravchenko, I. I.

AU - Pearton, S. J.

AU - Ren, F.

PY - 2011

Y1 - 2011

N2 - A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In0.52Al0.48As/In0.42Ga 0.58As0.77Sb0.23/In0.53Ga 0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/cm2and a high dc current gain of 123.8 for a DHBT with a 0.65 x 8.65 μm2 emitter area were obtained. A unity gain cut-off frequency (fT) of 260 GHz and a maximum oscillation frequency (fmax) of 485 GHz at JC = 302 kA/cm2 were achieved.

AB - A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In0.52Al0.48As/In0.42Ga 0.58As0.77Sb0.23/In0.53Ga 0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/cm2and a high dc current gain of 123.8 for a DHBT with a 0.65 x 8.65 μm2 emitter area were obtained. A unity gain cut-off frequency (fT) of 260 GHz and a maximum oscillation frequency (fmax) of 485 GHz at JC = 302 kA/cm2 were achieved.

UR - https://www.scopus.com/pages/publications/84863129827

U2 - 10.1149/1.3629960

DO - 10.1149/1.3629960

M3 - Conference contribution

AN - SCOPUS:84863129827

SN - 9781566779067

T3 - ECS Transactions

SP - 117

EP - 127

BT - State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53

PB - Electrochemical Society Inc.

T2 - State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting

Y2 - 9 October 2011 through 14 October 2011

ER -

Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

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