Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

Chien Fong Lo; Chih Yang Chang; S. H. Chen; C. M. Chang; S. Y. Wang; J. I. Chyi; I. I. Kravchenko; S. J. Pearton; F. Ren

doi:10.1149/1.3629960

Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

Chien Fong Lo, Chih Yang Chang, S. H. Chen, C. M. Chang, S. Y. Wang, J. I. Chyi, I. I. Kravchenko, S. J. Pearton, F. Ren

Nanofabrication Research Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In_0.52Al_0.48As/In_0.42Ga _0.58As_0.77Sb_0.23/In_0.53Ga _0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/cm²and a high dc current gain of 123.8 for a DHBT with a 0.65 x 8.65 μm² emitter area were obtained. A unity gain cut-off frequency (f_T) of 260 GHz and a maximum oscillation frequency (f_max) of 485 GHz at J_C = 302 kA/cm² were achieved.

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53
Publisher	Electrochemical Society Inc.
Pages	117-127
Number of pages	11
Edition	6
ISBN (Electronic)	9781607682608
ISBN (Print)	9781566779067
DOIs	https://doi.org/10.1149/1.3629960
State	Published - 2011
Event	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, United States Duration: Oct 9 2011 → Oct 14 2011

Publication series

Name	ECS Transactions
Number	6
Volume	41
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
Country/Territory	United States
City	Boston, MA
Period	10/9/11 → 10/14/11

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10.1149/1.3629960

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Lo, C. F., Chang, C. Y., Chen, S. H., Chang, C. M., Wang, S. Y., Chyi, J. I., Kravchenko, I. I., Pearton, S. J., & Ren, F. (2011). Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors. In State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 (6 ed., pp. 117-127). (ECS Transactions; Vol. 41, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/1.3629960

@inproceedings{f1935091d42e4b178cde154b12a62e10,

title = "Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors",

abstract = "A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In0.52Al0.48As/In0.42Ga 0.58As0.77Sb0.23/In0.53Ga 0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/cm2and a high dc current gain of 123.8 for a DHBT with a 0.65 x 8.65 μm2 emitter area were obtained. A unity gain cut-off frequency (fT) of 260 GHz and a maximum oscillation frequency (fmax) of 485 GHz at JC = 302 kA/cm2 were achieved.",

author = "Lo, \{Chien Fong\} and Chang, \{Chih Yang\} and Chen, \{S. H.\} and Chang, \{C. M.\} and Wang, \{S. Y.\} and Chyi, \{J. I.\} and Kravchenko, \{I. I.\} and Pearton, \{S. J.\} and F. Ren",

year = "2011",

doi = "10.1149/1.3629960",

language = "English",

isbn = "9781566779067",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "6",

pages = "117--127",

booktitle = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53",

edition = "6",

note = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",

}

Lo, CF, Chang, CY, Chen, SH, Chang, CM, Wang, SY, Chyi, JI, Kravchenko, II, Pearton, SJ & Ren, F 2011, Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors. in State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6 edn, ECS Transactions, no. 6, vol. 41, Electrochemical Society Inc., pp. 117-127, State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting, Boston, MA, United States, 10/9/11. https://doi.org/10.1149/1.3629960

Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors. / Lo, Chien Fong; Chang, Chih Yang; Chen, S. H. et al.
State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6. ed. Electrochemical Society Inc., 2011. p. 117-127 (ECS Transactions; Vol. 41, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

AU - Lo, Chien Fong

AU - Chang, Chih Yang

AU - Chen, S. H.

AU - Chang, C. M.

AU - Wang, S. Y.

AU - Chyi, J. I.

AU - Kravchenko, I. I.

AU - Pearton, S. J.

AU - Ren, F.

PY - 2011

Y1 - 2011

N2 - A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In0.52Al0.48As/In0.42Ga 0.58As0.77Sb0.23/In0.53Ga 0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/cm2and a high dc current gain of 123.8 for a DHBT with a 0.65 x 8.65 μm2 emitter area were obtained. A unity gain cut-off frequency (fT) of 260 GHz and a maximum oscillation frequency (fmax) of 485 GHz at JC = 302 kA/cm2 were achieved.

AB - A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In0.52Al0.48As/In0.42Ga 0.58As0.77Sb0.23/In0.53Ga 0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/cm2and a high dc current gain of 123.8 for a DHBT with a 0.65 x 8.65 μm2 emitter area were obtained. A unity gain cut-off frequency (fT) of 260 GHz and a maximum oscillation frequency (fmax) of 485 GHz at JC = 302 kA/cm2 were achieved.

UR - https://www.scopus.com/pages/publications/84863129827

U2 - 10.1149/1.3629960

DO - 10.1149/1.3629960

M3 - Conference contribution

AN - SCOPUS:84863129827

SN - 9781566779067

T3 - ECS Transactions

SP - 117

EP - 127

BT - State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53

PB - Electrochemical Society Inc.

T2 - State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting

Y2 - 9 October 2011 through 14 October 2011

ER -

Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

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