@inproceedings{f1935091d42e4b178cde154b12a62e10,
title = "Fabrication and characterization of self-aligned InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors",
abstract = "A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In0.52Al0.48As/In0.42Ga 0.58As0.77Sb0.23/In0.53Ga 0.47As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/cm2and a high dc current gain of 123.8 for a DHBT with a 0.65 x 8.65 μm2 emitter area were obtained. A unity gain cut-off frequency (fT) of 260 GHz and a maximum oscillation frequency (fmax) of 485 GHz at JC = 302 kA/cm2 were achieved.",
author = "Lo, {Chien Fong} and Chang, {Chih Yang} and Chen, {S. H.} and Chang, {C. M.} and Wang, {S. Y.} and Chyi, {J. I.} and Kravchenko, {I. I.} and Pearton, {S. J.} and F. Ren",
year = "2011",
doi = "10.1149/1.3629960",
language = "English",
isbn = "9781566779067",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "6",
pages = "117--127",
booktitle = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53",
edition = "6",
note = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",
}