Fabrication and Characterization of Carbon Nanofiber-Based Vertically Integrated Schottky Barrier Junction Diodes

Xiaojing Yang; Michael A. Guillorn; Derek Austin; Anatoli V. Melechko; Hongtao Cui; Harry M. Meyer; Vladimir I. Merkulov; J. B.O. Caughman; Douglas H. Lowndes; Michael L. Simpson

doi:10.1021/nl0346631

Fabrication and Characterization of Carbon Nanofiber-Based Vertically Integrated Schottky Barrier Junction Diodes

Xiaojing Yang
, Michael A. Guillorn
, Derek Austin
, Anatoli V. Melechko
, Hongtao Cui
, Harry M. Meyer
, Vladimir I. Merkulov
, J. B.O. Caughman
, Douglas H. Lowndes
, Michael L. Simpson

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

We report on the fabrication and electrical characterization of active nanoscale electronic devices using single vertically aligned carbon nanofibers (VACNFs). A rectifying behavior consistent with a 0.3 eV Schottky barrier was found. Experimental results indicate that a region of semiconducting SIC Is formed directly beneath the VACNF during the growth process, creating the Schottky-barrier junction between this semiconductor material and the metallic carbon nanofibers.

Original language	English
Pages (from-to)	1751-1755
Number of pages	5
Journal	Nano Letters
Volume	3
Issue number	12
DOIs	https://doi.org/10.1021/nl0346631
State	Published - Dec 2003

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10.1021/nl0346631

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title = "Fabrication and Characterization of Carbon Nanofiber-Based Vertically Integrated Schottky Barrier Junction Diodes",

abstract = "We report on the fabrication and electrical characterization of active nanoscale electronic devices using single vertically aligned carbon nanofibers (VACNFs). A rectifying behavior consistent with a 0.3 eV Schottky barrier was found. Experimental results indicate that a region of semiconducting SIC Is formed directly beneath the VACNF during the growth process, creating the Schottky-barrier junction between this semiconductor material and the metallic carbon nanofibers.",

author = "Xiaojing Yang and Guillorn, \{Michael A.\} and Derek Austin and Melechko, \{Anatoli V.\} and Hongtao Cui and Meyer, \{Harry M.\} and Merkulov, \{Vladimir I.\} and Caughman, \{J. B.O.\} and Lowndes, \{Douglas H.\} and Simpson, \{Michael L.\}",

year = "2003",

month = dec,

doi = "10.1021/nl0346631",

language = "English",

volume = "3",

pages = "1751--1755",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "12",

}

TY - JOUR

T1 - Fabrication and Characterization of Carbon Nanofiber-Based Vertically Integrated Schottky Barrier Junction Diodes

AU - Yang, Xiaojing

AU - Guillorn, Michael A.

AU - Austin, Derek

AU - Melechko, Anatoli V.

AU - Cui, Hongtao

AU - Meyer, Harry M.

AU - Merkulov, Vladimir I.

AU - Caughman, J. B.O.

AU - Lowndes, Douglas H.

AU - Simpson, Michael L.

PY - 2003/12

Y1 - 2003/12

N2 - We report on the fabrication and electrical characterization of active nanoscale electronic devices using single vertically aligned carbon nanofibers (VACNFs). A rectifying behavior consistent with a 0.3 eV Schottky barrier was found. Experimental results indicate that a region of semiconducting SIC Is formed directly beneath the VACNF during the growth process, creating the Schottky-barrier junction between this semiconductor material and the metallic carbon nanofibers.

AB - We report on the fabrication and electrical characterization of active nanoscale electronic devices using single vertically aligned carbon nanofibers (VACNFs). A rectifying behavior consistent with a 0.3 eV Schottky barrier was found. Experimental results indicate that a region of semiconducting SIC Is formed directly beneath the VACNF during the growth process, creating the Schottky-barrier junction between this semiconductor material and the metallic carbon nanofibers.

UR - https://www.scopus.com/pages/publications/0347362540

U2 - 10.1021/nl0346631

DO - 10.1021/nl0346631

M3 - Article

AN - SCOPUS:0347362540

SN - 1530-6984

VL - 3

SP - 1751

EP - 1755

JO - Nano Letters

JF - Nano Letters

IS - 12

ER -

Fabrication and Characterization of Carbon Nanofiber-Based Vertically Integrated Schottky Barrier Junction Diodes

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