Fabrication and Characterization of Carbon Nanofiber-Based Vertically Integrated Schottky Barrier Junction Diodes

Xiaojing Yang; Michael A. Guillorn; Derek Austin; Anatoli V. Melechko; Hongtao Cui; Harry M. Meyer; Vladimir I. Merkulov; J. B.O. Caughman; Douglas H. Lowndes; Michael L. Simpson

doi:10.1021/nl0346631

Fabrication and Characterization of Carbon Nanofiber-Based Vertically Integrated Schottky Barrier Junction Diodes

Xiaojing Yang, Michael A. Guillorn, Derek Austin, Anatoli V. Melechko, Hongtao Cui, Harry M. Meyer, Vladimir I. Merkulov, J. B.O. Caughman, Douglas H. Lowndes, Michael L. Simpson

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

We report on the fabrication and electrical characterization of active nanoscale electronic devices using single vertically aligned carbon nanofibers (VACNFs). A rectifying behavior consistent with a 0.3 eV Schottky barrier was found. Experimental results indicate that a region of semiconducting SIC Is formed directly beneath the VACNF during the growth process, creating the Schottky-barrier junction between this semiconductor material and the metallic carbon nanofibers.

Original language	English
Pages (from-to)	1751-1755
Number of pages	5
Journal	Nano Letters
Volume	3
Issue number	12
DOIs	https://doi.org/10.1021/nl0346631
State	Published - Dec 2003

Access to Document

10.1021/nl0346631

Cite this

@article{a630c8ecd31a4e4eba8767b25905a8ad,

title = "Fabrication and Characterization of Carbon Nanofiber-Based Vertically Integrated Schottky Barrier Junction Diodes",

abstract = "We report on the fabrication and electrical characterization of active nanoscale electronic devices using single vertically aligned carbon nanofibers (VACNFs). A rectifying behavior consistent with a 0.3 eV Schottky barrier was found. Experimental results indicate that a region of semiconducting SIC Is formed directly beneath the VACNF during the growth process, creating the Schottky-barrier junction between this semiconductor material and the metallic carbon nanofibers.",

author = "Xiaojing Yang and Guillorn, {Michael A.} and Derek Austin and Melechko, {Anatoli V.} and Hongtao Cui and Meyer, {Harry M.} and Merkulov, {Vladimir I.} and Caughman, {J. B.O.} and Lowndes, {Douglas H.} and Simpson, {Michael L.}",

year = "2003",

month = dec,

doi = "10.1021/nl0346631",

language = "English",

volume = "3",

pages = "1751--1755",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "12",

}

TY - JOUR

T1 - Fabrication and Characterization of Carbon Nanofiber-Based Vertically Integrated Schottky Barrier Junction Diodes

AU - Yang, Xiaojing

AU - Guillorn, Michael A.

AU - Austin, Derek

AU - Melechko, Anatoli V.

AU - Cui, Hongtao

AU - Meyer, Harry M.

AU - Merkulov, Vladimir I.

AU - Caughman, J. B.O.

AU - Lowndes, Douglas H.

AU - Simpson, Michael L.

PY - 2003/12

Y1 - 2003/12

N2 - We report on the fabrication and electrical characterization of active nanoscale electronic devices using single vertically aligned carbon nanofibers (VACNFs). A rectifying behavior consistent with a 0.3 eV Schottky barrier was found. Experimental results indicate that a region of semiconducting SIC Is formed directly beneath the VACNF during the growth process, creating the Schottky-barrier junction between this semiconductor material and the metallic carbon nanofibers.

AB - We report on the fabrication and electrical characterization of active nanoscale electronic devices using single vertically aligned carbon nanofibers (VACNFs). A rectifying behavior consistent with a 0.3 eV Schottky barrier was found. Experimental results indicate that a region of semiconducting SIC Is formed directly beneath the VACNF during the growth process, creating the Schottky-barrier junction between this semiconductor material and the metallic carbon nanofibers.

UR - http://www.scopus.com/inward/record.url?scp=0347362540&partnerID=8YFLogxK

U2 - 10.1021/nl0346631

DO - 10.1021/nl0346631

M3 - Article

AN - SCOPUS:0347362540

SN - 1530-6984

VL - 3

SP - 1751

EP - 1755

JO - Nano Letters

JF - Nano Letters

IS - 12

ER -

Fabrication and Characterization of Carbon Nanofiber-Based Vertically Integrated Schottky Barrier Junction Diodes

Abstract

Access to Document

Other files and links

Fingerprint

Cite this