Extremely large magnetoresistance in high-mobility SrNbO₃ SrTiO₃ heterostructures

An extremely large linear magnetoresistance (LMR) is a ubiquitous phenomenon emerging from topological Dirac and Weyl semimetals. However, the connection between an LMR and a nontrivial topology is under extensive debate. In this paper, by precisely controlling the thickness of thin films grown on substrates, we observe an LMR over a large carrier density range with a magnetoresistance as high as at a carrier density , far away from the quantum-limit regime. The temperature-, magnetic-field-, and carrier-density-dependent LMR in heterostructures provides compelling evidence of a mobility-driven LMR in coherent electronic systems. Our results uncover the general principle of an LMR and shed light on proper categorization of transport properties in topological and correlated materials.