External control of the direction of magnetization in ferromagnetic InMnAs/GaSb heterostructures

X. Liu; W. L. Lim; L. V. Titova; T. Wojtowicz; M. Kutrowski; K. J. Yee; M. Dobrowolska; J. K. Furdyna; S. J. Potashnik; M. B. Stone; P. Schiffer; I. Vurgaftman; J. R. Meyer

doi:10.1016/j.physe.2003.08.036

External control of the direction of magnetization in ferromagnetic InMnAs/GaSb heterostructures

X. Liu, W. L. Lim, L. V. Titova, T. Wojtowicz, M. Kutrowski, K. J. Yee, M. Dobrowolska, J. K. Furdyna, S. J. Potashnik, M. B. Stone, P. Schiffer, I. Vurgaftman, J. R. Meyer

Research output: Contribution to journal › Conference article › peer-review

20 Scopus citations

Abstract

In this paper, we demonstrate external control over the magnetization direction in ferromagnetic (FM) In_1-xMn_xAs/GaSb heterostructures. FM ordering with T_C as high as 50 K is confirmed by superconducting quantum interference device magnetization, anomalous Hall effect (AHE), and magneto-optical Kerr effect measurements. Even though tensile strain is known to favor an easy axis normal to the layer plane, at low temperatures we observe that the magnetization direction in several samples is intermediate between the normal and in-plane axes. As the temperature increases, however, the easy axis rotates in the direction normal to the plane. We further demonstrate that the easy magnetization axis can be controlled by incident light through a bolometric effect, which induces a pronounced increase in the amplitude of the AHE. A mean-field-theory model for the carrier-mediated ferromagnetism reproduces the tendency for dramatic reorientations of the magnetization axis, but not the specific sensitivity to small temperature variations.

Original language	English
Pages (from-to)	370-373
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	20
Issue number	3-4
DOIs	https://doi.org/10.1016/j.physe.2003.08.036
State	Published - Jan 2004
Externally published	Yes
Event	Proceedings of the 11th International Conference on Narrow Gap - Buffalo, NY., United States Duration: Jun 16 2003 → Jun 20 2003

Funding

This work was supported by the DARPA/SpinS Program through the Office of Naval Research.

Funders	Funder number
Office of Naval Research

Keywords

Ferromagnetic semiconductor
InMnAs
Magnetic anisotropy

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10.1016/j.physe.2003.08.036

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Liu, X., Lim, W. L., Titova, L. V., Wojtowicz, T., Kutrowski, M., Yee, K. J., Dobrowolska, M., Furdyna, J. K., Potashnik, S. J., Stone, M. B., Schiffer, P., Vurgaftman, I., & Meyer, J. R. (2004). External control of the direction of magnetization in ferromagnetic InMnAs/GaSb heterostructures. Physica E: Low-Dimensional Systems and Nanostructures, 20(3-4), 370-373. https://doi.org/10.1016/j.physe.2003.08.036

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title = "External control of the direction of magnetization in ferromagnetic InMnAs/GaSb heterostructures",

abstract = "In this paper, we demonstrate external control over the magnetization direction in ferromagnetic (FM) In1-xMnxAs/GaSb heterostructures. FM ordering with TC as high as 50 K is confirmed by superconducting quantum interference device magnetization, anomalous Hall effect (AHE), and magneto-optical Kerr effect measurements. Even though tensile strain is known to favor an easy axis normal to the layer plane, at low temperatures we observe that the magnetization direction in several samples is intermediate between the normal and in-plane axes. As the temperature increases, however, the easy axis rotates in the direction normal to the plane. We further demonstrate that the easy magnetization axis can be controlled by incident light through a bolometric effect, which induces a pronounced increase in the amplitude of the AHE. A mean-field-theory model for the carrier-mediated ferromagnetism reproduces the tendency for dramatic reorientations of the magnetization axis, but not the specific sensitivity to small temperature variations.",

keywords = "Ferromagnetic semiconductor, InMnAs, Magnetic anisotropy",

author = "X. Liu and Lim, {W. L.} and Titova, {L. V.} and T. Wojtowicz and M. Kutrowski and Yee, {K. J.} and M. Dobrowolska and Furdyna, {J. K.} and Potashnik, {S. J.} and Stone, {M. B.} and P. Schiffer and I. Vurgaftman and Meyer, {J. R.}",

year = "2004",

month = jan,

doi = "10.1016/j.physe.2003.08.036",

language = "English",

volume = "20",

pages = "370--373",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "3-4",

note = "Proceedings of the 11th International Conference on Narrow Gap ; Conference date: 16-06-2003 Through 20-06-2003",

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Liu, X, Lim, WL, Titova, LV, Wojtowicz, T, Kutrowski, M, Yee, KJ, Dobrowolska, M, Furdyna, JK, Potashnik, SJ, Stone, MB, Schiffer, P, Vurgaftman, I & Meyer, JR 2004, 'External control of the direction of magnetization in ferromagnetic InMnAs/GaSb heterostructures', Physica E: Low-Dimensional Systems and Nanostructures, vol. 20, no. 3-4, pp. 370-373. https://doi.org/10.1016/j.physe.2003.08.036

TY - JOUR

T1 - External control of the direction of magnetization in ferromagnetic InMnAs/GaSb heterostructures

AU - Liu, X.

AU - Lim, W. L.

AU - Titova, L. V.

AU - Wojtowicz, T.

AU - Kutrowski, M.

AU - Yee, K. J.

AU - Dobrowolska, M.

AU - Furdyna, J. K.

AU - Potashnik, S. J.

AU - Stone, M. B.

AU - Schiffer, P.

AU - Vurgaftman, I.

AU - Meyer, J. R.

PY - 2004/1

Y1 - 2004/1

N2 - In this paper, we demonstrate external control over the magnetization direction in ferromagnetic (FM) In1-xMnxAs/GaSb heterostructures. FM ordering with TC as high as 50 K is confirmed by superconducting quantum interference device magnetization, anomalous Hall effect (AHE), and magneto-optical Kerr effect measurements. Even though tensile strain is known to favor an easy axis normal to the layer plane, at low temperatures we observe that the magnetization direction in several samples is intermediate between the normal and in-plane axes. As the temperature increases, however, the easy axis rotates in the direction normal to the plane. We further demonstrate that the easy magnetization axis can be controlled by incident light through a bolometric effect, which induces a pronounced increase in the amplitude of the AHE. A mean-field-theory model for the carrier-mediated ferromagnetism reproduces the tendency for dramatic reorientations of the magnetization axis, but not the specific sensitivity to small temperature variations.

AB - In this paper, we demonstrate external control over the magnetization direction in ferromagnetic (FM) In1-xMnxAs/GaSb heterostructures. FM ordering with TC as high as 50 K is confirmed by superconducting quantum interference device magnetization, anomalous Hall effect (AHE), and magneto-optical Kerr effect measurements. Even though tensile strain is known to favor an easy axis normal to the layer plane, at low temperatures we observe that the magnetization direction in several samples is intermediate between the normal and in-plane axes. As the temperature increases, however, the easy axis rotates in the direction normal to the plane. We further demonstrate that the easy magnetization axis can be controlled by incident light through a bolometric effect, which induces a pronounced increase in the amplitude of the AHE. A mean-field-theory model for the carrier-mediated ferromagnetism reproduces the tendency for dramatic reorientations of the magnetization axis, but not the specific sensitivity to small temperature variations.

KW - Ferromagnetic semiconductor

KW - InMnAs

KW - Magnetic anisotropy

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DO - 10.1016/j.physe.2003.08.036

M3 - Conference article

AN - SCOPUS:0347759810

SN - 1386-9477

VL - 20

SP - 370

EP - 373

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 3-4

T2 - Proceedings of the 11th International Conference on Narrow Gap

Y2 - 16 June 2003 through 20 June 2003

ER -

External control of the direction of magnetization in ferromagnetic InMnAs/GaSb heterostructures

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