Abstract
The functional design of transition metal oxide heterostructures depends critically on the growth of atomically flat epitaxial thin films. Often, improved functionality is expected for heterostructures and surfaces with orientations that do not have the lowest surface free energy. For example, crystal faces with a high surface free energy, such as rutile (001) planes, frequently exhibit higher catalytic activities but are correspondingly harder to synthesize due to faceting transitions. Here we propose a broadly applicable rapid-anneal solid phase epitaxial synthesis approach for the creation of nanometer thin, high surface free energy oxide heterostructures that are atomically flat. We demonstrate its efficacy by synthesizing atomically flat epitaxial RuO2(001) and TiO2(001) model systems. The former have a superior oxygen evolution activity, quantified by their lower onset potential and higher current density, relative to that of more common RuO2(110) films.
Original language | English |
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Article number | 086103 |
Journal | APL Materials |
Volume | 5 |
Issue number | 8 |
DOIs | |
State | Published - Aug 1 2017 |