Explosive crystallization in amorphous Si initiated by long pulse width laser irradiation

P. S. Peercy; J. Y. Tsao; S. R. Stiffler; Michael O. Thompson

doi:10.1063/1.99519

Explosive crystallization in amorphous Si initiated by long pulse width laser irradiation

P. S. Peercy
, J. Y. Tsao
, S. R. Stiffler
, Michael O. Thompson

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Explosive crystallization of amorphous Si is studied in a new heat-flow regime using long pulse (45 ns full width at half-maximum) ruby laser irradiation. In this regime, previously unobserved phenomena are found. Nucleation of crystalline Si is observed while the amorphous phase is melting at high (m/s) velocity and epitaxy from the underlying crystalline substrate is observed even under conditions for which the amorphous Si is never at any instant fully melted. These measurements, combined with previous measurements using short pulse irradiation, lead to development of a more complete model of explosive crystallization.

Original language	English
Pages (from-to)	203-205
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	3
DOIs	https://doi.org/10.1063/1.99519
State	Published - 1988
Externally published	Yes

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10.1063/1.99519

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title = "Explosive crystallization in amorphous Si initiated by long pulse width laser irradiation",

abstract = "Explosive crystallization of amorphous Si is studied in a new heat-flow regime using long pulse (45 ns full width at half-maximum) ruby laser irradiation. In this regime, previously unobserved phenomena are found. Nucleation of crystalline Si is observed while the amorphous phase is melting at high (m/s) velocity and epitaxy from the underlying crystalline substrate is observed even under conditions for which the amorphous Si is never at any instant fully melted. These measurements, combined with previous measurements using short pulse irradiation, lead to development of a more complete model of explosive crystallization.",

author = "Peercy, \{P. S.\} and Tsao, \{J. Y.\} and Stiffler, \{S. R.\} and Thompson, \{Michael O.\}",

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journal = "Applied Physics Letters",

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T1 - Explosive crystallization in amorphous Si initiated by long pulse width laser irradiation

AU - Peercy, P. S.

AU - Tsao, J. Y.

AU - Stiffler, S. R.

AU - Thompson, Michael O.

PY - 1988

Y1 - 1988

N2 - Explosive crystallization of amorphous Si is studied in a new heat-flow regime using long pulse (45 ns full width at half-maximum) ruby laser irradiation. In this regime, previously unobserved phenomena are found. Nucleation of crystalline Si is observed while the amorphous phase is melting at high (m/s) velocity and epitaxy from the underlying crystalline substrate is observed even under conditions for which the amorphous Si is never at any instant fully melted. These measurements, combined with previous measurements using short pulse irradiation, lead to development of a more complete model of explosive crystallization.

AB - Explosive crystallization of amorphous Si is studied in a new heat-flow regime using long pulse (45 ns full width at half-maximum) ruby laser irradiation. In this regime, previously unobserved phenomena are found. Nucleation of crystalline Si is observed while the amorphous phase is melting at high (m/s) velocity and epitaxy from the underlying crystalline substrate is observed even under conditions for which the amorphous Si is never at any instant fully melted. These measurements, combined with previous measurements using short pulse irradiation, lead to development of a more complete model of explosive crystallization.

UR - https://www.scopus.com/pages/publications/36549097201

U2 - 10.1063/1.99519

DO - 10.1063/1.99519

M3 - Article

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SP - 203

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Explosive crystallization in amorphous Si initiated by long pulse width laser irradiation

Abstract

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