Abstract
We have studied the ability of different oxidizing agents, other than H2O2 to reduce the surface leakage current of CdZnTe devices. All chemical treatments were performed in aqueous solutions, at room temperature, with weight percent concentrations of 2.5 g/25 ml. Before and after I-V curves were obtained. It was found that by increasing the basicity of the chemical treatment, greater reduction in surface leakage current occurred. The results show that these alternative chemical treatments reduced the surface leakage current as well as or better than H2O2 chemical treatment.
| Original language | English |
|---|---|
| Pages (from-to) | 481-485 |
| Number of pages | 5 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3768 |
| DOIs | |
| State | Published - 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1999 Hard X-Ray, Gamma-Ray, and Neutron Detector Physics - Denver, CO, USA Duration: Jul 19 1999 → Jul 23 1999 |
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