Experimental study of the response time of GaAs as a photoemitter

A. V. Aleksandrov; M. S. Avilov; R. Calabrese; G. Ciullo; N. S. Dikansky; V. Guidi; G. Lamanna; P. Lenisa; P. V. Logachov; A. V. Novokhatsky; L. Tecchio; B. Yang

doi:10.1103/PhysRevE.51.1449

Experimental study of the response time of GaAs as a photoemitter

A. V. Aleksandrov, M. S. Avilov, R. Calabrese, G. Ciullo, N. S. Dikansky, V. Guidi, G. Lamanna, P. Lenisa, P. V. Logachov, A. V. Novokhatsky, L. Tecchio, B. Yang

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20 Scopus citations

Abstract

An experimental investigation was carried out to measure the response time of GaAs in negative electron affinity conditions as a photoemitter. During the experiment, the photocathode was excited by a short-pulse (38 ps rms) frequency-doubled Nd:YLF laser. Results show that the rms response time of GaAs is shorter than 40 ps.

Original language	English
Pages (from-to)	1449-1452
Number of pages	4
Journal	Physical Review E - Statistical, Nonlinear, and Soft Matter Physics
Volume	51
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevE.51.1449
State	Published - 1995
Externally published	Yes

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Aleksandrov, A. V., Avilov, M. S., Calabrese, R., Ciullo, G., Dikansky, N. S., Guidi, V., Lamanna, G., Lenisa, P., Logachov, P. V., Novokhatsky, A. V., Tecchio, L., & Yang, B. (1995). Experimental study of the response time of GaAs as a photoemitter. Physical Review E - Statistical, Nonlinear, and Soft Matter Physics, 51(2), 1449-1452. https://doi.org/10.1103/PhysRevE.51.1449

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abstract = "An experimental investigation was carried out to measure the response time of GaAs in negative electron affinity conditions as a photoemitter. During the experiment, the photocathode was excited by a short-pulse (38 ps rms) frequency-doubled Nd:YLF laser. Results show that the rms response time of GaAs is shorter than 40 ps.",

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doi = "10.1103/PhysRevE.51.1449",

language = "English",

volume = "51",

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T1 - Experimental study of the response time of GaAs as a photoemitter

AU - Aleksandrov, A. V.

AU - Avilov, M. S.

AU - Calabrese, R.

AU - Ciullo, G.

AU - Dikansky, N. S.

AU - Guidi, V.

AU - Lamanna, G.

AU - Lenisa, P.

AU - Logachov, P. V.

AU - Novokhatsky, A. V.

AU - Tecchio, L.

AU - Yang, B.

PY - 1995

Y1 - 1995

N2 - An experimental investigation was carried out to measure the response time of GaAs in negative electron affinity conditions as a photoemitter. During the experiment, the photocathode was excited by a short-pulse (38 ps rms) frequency-doubled Nd:YLF laser. Results show that the rms response time of GaAs is shorter than 40 ps.

AB - An experimental investigation was carried out to measure the response time of GaAs in negative electron affinity conditions as a photoemitter. During the experiment, the photocathode was excited by a short-pulse (38 ps rms) frequency-doubled Nd:YLF laser. Results show that the rms response time of GaAs is shorter than 40 ps.

UR - https://www.scopus.com/pages/publications/0005305337

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DO - 10.1103/PhysRevE.51.1449

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AN - SCOPUS:0005305337

SN - 1063-651X

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EP - 1452

JO - Physical Review E - Statistical, Nonlinear, and Soft Matter Physics

JF - Physical Review E - Statistical, Nonlinear, and Soft Matter Physics

IS - 2

ER -

Experimental study of the response time of GaAs as a photoemitter

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