Abstract
A prototype of S-band RF photogun with GaAs photocathode has been built and tested at Novosibirsk. The main goal of this prototype is to check a possibility of long time operation for GaAs photocathode in a strong accelerating field of RF cavity. The first experimental results concerning dark current and lifetime of GaAs photocathode in NEA condition under high RF power are presented. The dark current observed is much higher than predicted. Possible mechanism of large dark current emission from NEA surface is suggested and discussed.
Original language | English |
---|---|
Pages | 78-80 |
Number of pages | 3 |
DOIs | |
State | Published - 1999 |
Externally published | Yes |
Event | The 18th Biennial Particle Accelerator Conference - New York, NY, USA Duration: Mar 27 1999 → Apr 2 1999 |
Conference
Conference | The 18th Biennial Particle Accelerator Conference |
---|---|
City | New York, NY, USA |
Period | 03/27/99 → 04/2/99 |