Abstract
Thin film platinum resistors were used to directly measure temperature profiles during laser spike annealing (LSA) with high spatial and temporal resolution. Observed resistance changes were calibrated to absolute temperatures using the melting points of the substrate silicon and thin gold films. Both the time-dependent temperature experienced by the sample during passage of the focussed laser beam and profiles across the spatially dependent laser intensity were obtained with sub-millisecond time resolution and 50 m spatial resolution. Full 3-dimensional simulations incorporating both optical and thermal variations of material parameters were compared with these results. Accounting properly for the specific material parameters, good agreement between experiments and simulations was achieved. Future temperature measurements in complex environments will permit critical evaluation of LSA simulations methodologies.
| Original language | English |
|---|---|
| Article number | 211915 |
| Journal | Applied Physics Letters |
| Volume | 100 |
| Issue number | 21 |
| DOIs | |
| State | Published - May 21 2012 |
| Externally published | Yes |
Funding
The authors would like to thank the Semiconductor Research Corporation (SRC) for funding and Intel for the gift of computer resources, and invaluable help from Florencia Paredes for experimental measurements. Work made use of facilities in the Cornell Center for Materials Research (NSF-DMR 0520404) and the Cornell Nanoscale Facility (NSF-ECS 0335765).
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