Experimental challenges in using a 1.2 kV GaN HEMT for high power density converters

Fahmid Sadeque; Amin Yousefzadeh Fard; Aswad Adib; Mohammad B. Shadmand; Behrooz Mirafza

doi:10.1109/TPEC.2019.8662190

Experimental challenges in using a 1.2 kV GaN HEMT for high power density converters

Fahmid Sadeque, Amin Yousefzadeh Fard, Aswad Adib, Mohammad B. Shadmand, Behrooz Mirafza

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Recent success in the fabrication of 1.2 kV high-performance GaN HEMTs has made this technology an interesting alternative for high power applications. In this paper, for the first time, the newly available 1200V/15A GaN HEMTs is experimentally studied. The switching behavior of the device is investigated precisely to provide a better perspective on this family of switches. A test converter circuit is built with the GaN HEMT devices, which has been tested under different voltages and frequencies. Various challenges faced throughout the designing and testing stages are identified and reported in this paper for further investigations in the future.

Original language	English
Title of host publication	2019 IEEE Texas Power and Energy Conference, TPEC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538692844
DOIs	https://doi.org/10.1109/TPEC.2019.8662190
State	Published - Mar 6 2019
Externally published	Yes
Event	2019 IEEE Texas Power and Energy Conference, TPEC 2019 - College Station, United States Duration: Feb 7 2019 → Feb 8 2019

Publication series

Name	2019 IEEE Texas Power and Energy Conference, TPEC 2019

Conference

Conference	2019 IEEE Texas Power and Energy Conference, TPEC 2019
Country/Territory	United States
City	College Station
Period	02/7/19 → 02/8/19

Keywords

Gallium Nitride
HEMT
High Power Density Converters
High Voltage Semiconductors
Wide Bandgap Semiconductors

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10.1109/TPEC.2019.8662190

Cite this

Sadeque, F., Fard, A. Y., Adib, A., Shadmand, M. B., & Mirafza, B. (2019). Experimental challenges in using a 1.2 kV GaN HEMT for high power density converters. In 2019 IEEE Texas Power and Energy Conference, TPEC 2019 Article 8662190 (2019 IEEE Texas Power and Energy Conference, TPEC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TPEC.2019.8662190

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title = "Experimental challenges in using a 1.2 kV GaN HEMT for high power density converters",

abstract = "Recent success in the fabrication of 1.2 kV high-performance GaN HEMTs has made this technology an interesting alternative for high power applications. In this paper, for the first time, the newly available 1200V/15A GaN HEMTs is experimentally studied. The switching behavior of the device is investigated precisely to provide a better perspective on this family of switches. A test converter circuit is built with the GaN HEMT devices, which has been tested under different voltages and frequencies. Various challenges faced throughout the designing and testing stages are identified and reported in this paper for further investigations in the future.",

keywords = "Gallium Nitride, HEMT, High Power Density Converters, High Voltage Semiconductors, Wide Bandgap Semiconductors",

author = "Fahmid Sadeque and Fard, {Amin Yousefzadeh} and Aswad Adib and Shadmand, {Mohammad B.} and Behrooz Mirafza",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE Texas Power and Energy Conference, TPEC 2019 ; Conference date: 07-02-2019 Through 08-02-2019",

year = "2019",

month = mar,

day = "6",

doi = "10.1109/TPEC.2019.8662190",

language = "English",

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Sadeque, F, Fard, AY, Adib, A, Shadmand, MB & Mirafza, B 2019, Experimental challenges in using a 1.2 kV GaN HEMT for high power density converters. in 2019 IEEE Texas Power and Energy Conference, TPEC 2019., 8662190, 2019 IEEE Texas Power and Energy Conference, TPEC 2019, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE Texas Power and Energy Conference, TPEC 2019, College Station, United States, 02/7/19. https://doi.org/10.1109/TPEC.2019.8662190

Experimental challenges in using a 1.2 kV GaN HEMT for high power density converters. / Sadeque, Fahmid; Fard, Amin Yousefzadeh; Adib, Aswad et al.
2019 IEEE Texas Power and Energy Conference, TPEC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8662190 (2019 IEEE Texas Power and Energy Conference, TPEC 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - Recent success in the fabrication of 1.2 kV high-performance GaN HEMTs has made this technology an interesting alternative for high power applications. In this paper, for the first time, the newly available 1200V/15A GaN HEMTs is experimentally studied. The switching behavior of the device is investigated precisely to provide a better perspective on this family of switches. A test converter circuit is built with the GaN HEMT devices, which has been tested under different voltages and frequencies. Various challenges faced throughout the designing and testing stages are identified and reported in this paper for further investigations in the future.

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KW - High Power Density Converters

KW - High Voltage Semiconductors

KW - Wide Bandgap Semiconductors

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Experimental challenges in using a 1.2 kV GaN HEMT for high power density converters

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