Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center

N. Woodward; J. Poplawsky; B. Mitchell; A. Nishikawa; Y. Fujiwara; V. Dierolf

doi:10.1063/1.3533806

Excitation of Eu³⁺ in gallium nitride epitaxial layers: Majority versus trap defect center

N. Woodward, J. Poplawsky, B. Mitchell, A. Nishikawa, Y. Fujiwara, V. Dierolf

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

We report studies of the excitation mechanism of Eu ions in situ doped during organometallic vapor-phase epitaxy (OMVPE) of GaN. We find that the bright red emission under above-band gap excitation originates primarily from an incorporation site that exhibits high excitation efficiency but occurs in low relative abundance (<3%). The latter represents a device efficiency bottleneck, limiting the emission at high excitation intensities. The majority site, which scales well with the total Eu concentration, exhibits low energy transfer efficiency but dominates the emission under direct excitation in the visible spectral region due to high relative abundance (>97%).

Original language	English
Article number	011102
Journal	Applied Physics Letters
Volume	98
Issue number	1
DOIs	https://doi.org/10.1063/1.3533806
State	Published - Jan 3 2011
Externally published	Yes

Funding

The work was supported by a grant from the National Science Foundation (Grant No. NSF-DMR 0705217). Y.F. and A.N. would like to acknowledge gratefully financial support by Grant-in-Aid for Creative Scientific Research Grant No. 19GS1209 from the Japan Society for the Promotion of Science, and by Grant-in-Aid for Young Scientists (B) Grant No. 21760007 and by the Global Centre of Excellence Program ‘Advanced Structural and Functional Materials Design’ from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

Funders	Funder number
National Science Foundation	NSF-DMR 0705217
Japan Society for the Promotion of Science	19GS1209, 21760007
Ministry of Education, Culture, Sports, Science and Technology

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AU - Dierolf, V.

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Excitation of Eu³⁺ in gallium nitride epitaxial layers: Majority versus trap defect center

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