Excimer laser reduction and patterning of graphite oxide

Denis A. Sokolov, Christopher M. Rouleau, David B. Geohegan, Thomas M. Orlando

Research output: Contribution to journalArticlepeer-review

111 Scopus citations

Abstract

A successful approach and the operational parameters necessary for reduction of graphite oxide (GO) to multilayer graphene using 248 nm excimer laser irradiation in both vacuum and ultrahigh purity N2 background environments is described. The utility of excimer laser reduction is demonstrated by production of simple line and logo patterns using standard microscale lithographic patterning strategies. Multilayer graphene formation is confirmed with Raman and X-ray photoelectron spectroscopies, and the morphology of the processed GO sample is evaluated with scanning electron microscopy. Four-point probe measurements of the excimer laser reduced GO indicate typical sheet resistances of ∼100-500 Ω/sq, which is a significant improvement over other values reported in the literature for other laser-based GO reduction methods.

Original languageEnglish
Pages (from-to)81-89
Number of pages9
JournalCarbon
Volume53
DOIs
StatePublished - Mar 2013

Funding

The authors acknowledge helpful discussions with Dr. Alex Puretzky and support from the Georgia Tech Laboratory for New Electronic Materials, National Science Foundation Grant: NSF MRSEC DMR-0820382 . We thank Prof. Paul Houston for use of the KrF excimer laser at Georgia Institute of Technology. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division , Office of Basic Energy Sciences , U.S. Department of Energy .

FundersFunder number
Georgia Tech Laboratory for New Electronic Materials
Scientific User Facilities Division
National Science FoundationMRSEC DMR-0820382
U.S. Department of Energy
Basic Energy Sciences
Oak Ridge National Laboratory

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