Exchange biasing of the ferromagnetic semiconductor (Ga,Mn)As by MnO (invited)

K. F. Eid; M. B. Stone; O. Maksimov; T. C. Shih; K. C. Ku; W. Fadgen; C. J. Palmstrøm; P. Schiffer; N. Samarth

doi:10.1063/1.1846033

Exchange biasing of the ferromagnetic semiconductor (Ga,Mn)As by MnO (invited)

K. F. Eid, M. B. Stone, O. Maksimov, T. C. Shih, K. C. Ku, W. Fadgen, C. J. Palmstrøm, P. Schiffer, N. Samarth

Direct Geometry

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-x Mnx As) by proximity to an antiferromagnetic oxide layer (MnO). We present a detailed characterization study of the antiferromagnetic layer using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray reflection. In addition, we describe the variation of the exchange and coercive fields with temperature and cooling field for multiple samples.

Original language	English
Article number	10D304
Journal	Journal of Applied Physics
Volume	97
Issue number	10
DOIs	https://doi.org/10.1063/1.1846033
State	Published - May 15 2005

Funding

This research has been supported by the DARPA-SPINS program under Grant Numbers N00014-99-1093, -99-1-1005, -00-1-0951, and -01-1-0830, by ONR N00014-99-1-0071, and by NSF DMR 01-01318. We thank J. Shallenberger for the useful discussion and assistance with XPS measurements. We thank M. S. Angelone for the help with the XRR measurements. Work at ORNL was carried out under Contract No. DE-AC05-00OR22725, U. S. Department of Energy.

Funders	Funder number
DARPA-SPINS	N00014-99-1093, -00-1-0951, -01-1-0830, -99-1-1005
National Science Foundation	DE-AC05-00OR22725, DMR 01-01318
Office of Naval Research	N00014-99-1-0071
U.S. Department of Energy

Access to Document

10.1063/1.1846033

Cite this

@article{e295311145a344fbbe5b2c3dab70ee8f,

title = "Exchange biasing of the ferromagnetic semiconductor (Ga,Mn)As by MnO (invited)",

abstract = "We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-x Mnx As) by proximity to an antiferromagnetic oxide layer (MnO). We present a detailed characterization study of the antiferromagnetic layer using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray reflection. In addition, we describe the variation of the exchange and coercive fields with temperature and cooling field for multiple samples.",

author = "Eid, {K. F.} and Stone, {M. B.} and O. Maksimov and Shih, {T. C.} and Ku, {K. C.} and W. Fadgen and Palmstr{\o}m, {C. J.} and P. Schiffer and N. Samarth",

year = "2005",

month = may,

day = "15",

doi = "10.1063/1.1846033",

language = "English",

volume = "97",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Exchange biasing of the ferromagnetic semiconductor (Ga,Mn)As by MnO (invited)

AU - Eid, K. F.

AU - Stone, M. B.

AU - Maksimov, O.

AU - Shih, T. C.

AU - Ku, K. C.

AU - Fadgen, W.

AU - Palmstrøm, C. J.

AU - Schiffer, P.

AU - Samarth, N.

PY - 2005/5/15

Y1 - 2005/5/15

N2 - We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-x Mnx As) by proximity to an antiferromagnetic oxide layer (MnO). We present a detailed characterization study of the antiferromagnetic layer using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray reflection. In addition, we describe the variation of the exchange and coercive fields with temperature and cooling field for multiple samples.

AB - We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-x Mnx As) by proximity to an antiferromagnetic oxide layer (MnO). We present a detailed characterization study of the antiferromagnetic layer using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray reflection. In addition, we describe the variation of the exchange and coercive fields with temperature and cooling field for multiple samples.

UR - http://www.scopus.com/inward/record.url?scp=20944444959&partnerID=8YFLogxK

U2 - 10.1063/1.1846033

DO - 10.1063/1.1846033

M3 - Article

AN - SCOPUS:20944444959

SN - 0021-8979

VL - 97

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 10D304

ER -

Exchange biasing of the ferromagnetic semiconductor (Ga,Mn)As by MnO (invited)

Abstract

Funding

Access to Document

Other files and links

Fingerprint

Cite this