Exchange biasing of the ferromagnetic semiconductor Ga 1-xMn xAs

K. F. Eid; M. B. Stone; K. C. Ku; O. Maksimov; P. Schiffer; N. Samarth; T. C. Shin; C. J. Palmstrøm

doi:10.1063/1.1787945

Exchange biasing of the ferromagnetic semiconductor Ga _1-xMn _xAs

K. F. Eid, M. B. Stone, K. C. Ku, O. Maksimov, P. Schiffer, N. Samarth, T. C. Shin, C. J. Palmstrøm

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55 Scopus citations

Abstract

The exchange coupling of the ferromagnetic semiconductor Ga _1-xMn _xAs was investigated. A low temperature molecular beam epitaxy was used for the growth of the sample on (001) semi-insulating, epi-ready GaAs substrates. A comparison of the blocking temperature of the antiferromagnet (MnO) and the Curie temperature of the ferromagnet was performed. The dependence of the hysteresis loop parameters on the magnitude of the cooling fields was also investigated. From Rutherford backscattering (RBS) measurements, an increase in the channeling minimum yield, and an enhancement of the Ga channeling interface peak by ∼1×10 ¹⁵ atoms/cm ² were observed.

Original language	English
Pages (from-to)	1556-1558
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	9
DOIs	https://doi.org/10.1063/1.1787945
State	Published - Aug 30 2004
Externally published	Yes

Funding

This research has been supported by the DARPA-SPINS program under Grant Nos. N00014-99-1093, -99-1-1005, -00-1-0951, and -01-1-0830, by ONR N00014-99-1-0071 and by NSF DMR 01-01318. We thank J. Bass for useful discussions.

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abstract = "The exchange coupling of the ferromagnetic semiconductor Ga 1-xMn xAs was investigated. A low temperature molecular beam epitaxy was used for the growth of the sample on (001) semi-insulating, epi-ready GaAs substrates. A comparison of the blocking temperature of the antiferromagnet (MnO) and the Curie temperature of the ferromagnet was performed. The dependence of the hysteresis loop parameters on the magnitude of the cooling fields was also investigated. From Rutherford backscattering (RBS) measurements, an increase in the channeling minimum yield, and an enhancement of the Ga channeling interface peak by ∼1×10 15 atoms/cm 2 were observed.",

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AU - Eid, K. F.

AU - Stone, M. B.

AU - Ku, K. C.

AU - Maksimov, O.

AU - Schiffer, P.

AU - Samarth, N.

AU - Shin, T. C.

AU - Palmstrøm, C. J.

PY - 2004/8/30

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Exchange biasing of the ferromagnetic semiconductor Ga _1-xMn _xAs

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