Evolution of lattice defects upon Bi-doping of epitaxial Si overlayers on Si(1 0 0)

Jiaming Song; Bethany M. Hudak; Andrew R. Lupini

doi:10.1016/j.apsusc.2019.144284

Evolution of lattice defects upon Bi-doping of epitaxial Si overlayers on Si(1 0 0)

Jiaming Song, Bethany M. Hudak, Andrew R. Lupini

electron Microscopy and Microanalysis

Research output: Contribution to journal › Article › peer-review

Abstract

Single Bi dopants in Si exhibit promising properties for quantum information science. Here we study, as a function of Bi-doped Si film thickness, the evolution and ultimate removal of lattice defects that are associated with a recently demonstrated viable route to precisely incorporate Bi dopants in homoepitaxial Si thin films. Scanning tunneling microscopy imaging reveals how the elongated defect structures in the Si lattice, originating from prefabricated Bi nanolines on the substrate surface that are the source of the Bi dopants, evolve with increasing Si overlayer thickness. Moreover, we demonstrate that a prolonged low-temperature annealing is able to annihilate these defect structures while leaving a significant Bi dopant concentration in the Si films.

Original language	English
Article number	144284
Journal	Applied Surface Science
Volume	502
DOIs	https://doi.org/10.1016/j.apsusc.2019.144284
State	Published - Feb 1 2020

Funding

B.M.H. and J.S. were primarily sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory , managed by UT-Battelle, LLC, for the U.S. Department of Energy . A.R.L. and B.M.H were supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division . The authors acknowledge P.C. Snijders for extensive beneficial discussions and feedback on this manuscript. Appendix A

Funders	Funder number
A.R.L.
UT-Battelle
U.S. Department of Energy
Office of Science
Basic Energy Sciences
Oak Ridge National Laboratory
Laboratory Directed Research and Development

Keywords

Annealing
Bi dopant
Defect
Scanning tunneling microscopy
Si(1 0 0)
Solid phase epitaxy

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10.1016/j.apsusc.2019.144284

Cite this

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title = "Evolution of lattice defects upon Bi-doping of epitaxial Si overlayers on Si(1 0 0)",

abstract = "Single Bi dopants in Si exhibit promising properties for quantum information science. Here we study, as a function of Bi-doped Si film thickness, the evolution and ultimate removal of lattice defects that are associated with a recently demonstrated viable route to precisely incorporate Bi dopants in homoepitaxial Si thin films. Scanning tunneling microscopy imaging reveals how the elongated defect structures in the Si lattice, originating from prefabricated Bi nanolines on the substrate surface that are the source of the Bi dopants, evolve with increasing Si overlayer thickness. Moreover, we demonstrate that a prolonged low-temperature annealing is able to annihilate these defect structures while leaving a significant Bi dopant concentration in the Si films.",

keywords = "Annealing, Bi dopant, Defect, Scanning tunneling microscopy, Si(1 0 0), Solid phase epitaxy",

author = "Jiaming Song and Hudak, {Bethany M.} and Lupini, {Andrew R.}",

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AU - Song, Jiaming

AU - Hudak, Bethany M.

AU - Lupini, Andrew R.

PY - 2020/2/1

Y1 - 2020/2/1

N2 - Single Bi dopants in Si exhibit promising properties for quantum information science. Here we study, as a function of Bi-doped Si film thickness, the evolution and ultimate removal of lattice defects that are associated with a recently demonstrated viable route to precisely incorporate Bi dopants in homoepitaxial Si thin films. Scanning tunneling microscopy imaging reveals how the elongated defect structures in the Si lattice, originating from prefabricated Bi nanolines on the substrate surface that are the source of the Bi dopants, evolve with increasing Si overlayer thickness. Moreover, we demonstrate that a prolonged low-temperature annealing is able to annihilate these defect structures while leaving a significant Bi dopant concentration in the Si films.

AB - Single Bi dopants in Si exhibit promising properties for quantum information science. Here we study, as a function of Bi-doped Si film thickness, the evolution and ultimate removal of lattice defects that are associated with a recently demonstrated viable route to precisely incorporate Bi dopants in homoepitaxial Si thin films. Scanning tunneling microscopy imaging reveals how the elongated defect structures in the Si lattice, originating from prefabricated Bi nanolines on the substrate surface that are the source of the Bi dopants, evolve with increasing Si overlayer thickness. Moreover, we demonstrate that a prolonged low-temperature annealing is able to annihilate these defect structures while leaving a significant Bi dopant concentration in the Si films.

KW - Annealing

KW - Bi dopant

KW - Defect

KW - Scanning tunneling microscopy

KW - Si(1 0 0)

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JO - Applied Surface Science

JF - Applied Surface Science

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ER -

Evolution of lattice defects upon Bi-doping of epitaxial Si overlayers on Si(1 0 0)

Abstract

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Keywords

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Evolution of lattice defects upon Bi-doping of epitaxial Si overlayers on Si(1 0 0)

Abstract

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Cite this

Evolution of lattice defects upon Bi-doping of epitaxial Si overlayers on Si(1 0 0)