Evolution of III-V nitride alloy electronic structure: The localized to delocalized transition

P. R.C. Kent; A. Zunger

doi:10.1103/PhysRevLett.86.2613

Evolution of III-V nitride alloy electronic structure: The localized to delocalized transition

P. R.C. Kent
, A. Zunger

Research output: Contribution to journal › Article › peer-review

273 Scopus citations

Abstract

A pseudopotential supercell technique was applied to GaP_1-xN_x and GaAs_1-xN_x. The goal was to investigate how the discrete cluster state (CS), located initially in the fundamental band gap, and the perturbed host state (PHS) located within the continua develop with composition. The results lead to the physical picture for the evolution of alloy states in III-V nitrides.

Original language	English
Pages (from-to)	2613-2616
Number of pages	4
Journal	Physical Review Letters
Volume	86
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevLett.86.2613
State	Published - Mar 19 2001
Externally published	Yes

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10.1103/PhysRevLett.86.2613

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title = "Evolution of III-V nitride alloy electronic structure: The localized to delocalized transition",

abstract = "A pseudopotential supercell technique was applied to GaP1-xNx and GaAs1-xNx. The goal was to investigate how the discrete cluster state (CS), located initially in the fundamental band gap, and the perturbed host state (PHS) located within the continua develop with composition. The results lead to the physical picture for the evolution of alloy states in III-V nitrides.",

author = "Kent, \{P. R.C.\} and A. Zunger",

year = "2001",

month = mar,

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doi = "10.1103/PhysRevLett.86.2613",

language = "English",

volume = "86",

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journal = "Physical Review Letters",

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T1 - Evolution of III-V nitride alloy electronic structure

T2 - The localized to delocalized transition

AU - Kent, P. R.C.

AU - Zunger, A.

PY - 2001/3/19

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N2 - A pseudopotential supercell technique was applied to GaP1-xNx and GaAs1-xNx. The goal was to investigate how the discrete cluster state (CS), located initially in the fundamental band gap, and the perturbed host state (PHS) located within the continua develop with composition. The results lead to the physical picture for the evolution of alloy states in III-V nitrides.

AB - A pseudopotential supercell technique was applied to GaP1-xNx and GaAs1-xNx. The goal was to investigate how the discrete cluster state (CS), located initially in the fundamental band gap, and the perturbed host state (PHS) located within the continua develop with composition. The results lead to the physical picture for the evolution of alloy states in III-V nitrides.

UR - https://www.scopus.com/pages/publications/0035911682

U2 - 10.1103/PhysRevLett.86.2613

DO - 10.1103/PhysRevLett.86.2613

M3 - Article

AN - SCOPUS:0035911682

SN - 0031-9007

VL - 86

SP - 2613

EP - 2616

JO - Physical Review Letters

JF - Physical Review Letters

IS - 12

ER -

Evolution of III-V nitride alloy electronic structure: The localized to delocalized transition

Abstract

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