Abstract
The formation of R8 germanium is reported. The β-Sn phase is first induced by the indentation of amorphous germanium (a-Ge) and the resultant phases on pressure release are characterized by Raman scattering. The expected Raman line frequencies for the various phases of Ge are determined from first-principles calculations using density functional perturbation theory of the zone-center phonons in the diamond, ST12, BC8, and R8 Ge phases. In addition to the R8 phase, traces of BC8 may also be present following pressure release.
Original language | English |
---|---|
Article number | 085502 |
Journal | Physical Review Letters |
Volume | 110 |
Issue number | 8 |
DOIs | |
State | Published - Feb 20 2013 |
Externally published | Yes |