Abstract
Ag films prepared on Ge(111) at nearly room temperature were studied with high-resolution core-level photoemission spectroscopy. By selectively modifying the sample structure to label surface sites on the Ag film, we unambiguously identified the presence of a small amount of Ge segregating on top on the growing Ag overlayer. The origin and behavior of these segregated atoms and the structure of the overlayer are discussed.
Original language | English |
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Pages (from-to) | 8870-8873 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 33 |
Issue number | 12 |
DOIs | |
State | Published - 1986 |
Externally published | Yes |