TY - GEN
T1 - Evaluation of Radiation Hardness of Semiconductor Materials Against Alpha Particles for an API Detector
AU - Giacomini, Gabriele
AU - Carini, Gabriella
AU - Coventry, Matt
AU - Dabrowski, Mieczyslaw
AU - Deane, Connie Rose
AU - DellaPenna, Alfred
AU - Fabris, Lorenzo
AU - Deptuch, Grzegorz W.
AU - Herrmann, Sven
AU - Jurczyk, Brian
AU - Kierstead, James
AU - Kotov, Ivan
AU - McConchie, Seth
AU - Muller, Erik
AU - Pinaroli, Giovanni
AU - Pinelli, Donald
N1 - Publisher Copyright:
© 2020 IEEE
PY - 2020
Y1 - 2020
N2 - An Associated Particle Imaging (API) system consists of a high vacuum chamber where deuterium ions are accelerated on a tritium-loaded target, resulting in alpha particles and neutrons emitted back-to-back, the latter escaping the chamber and used, for example, for tomography of a high-Z sample. An accurate determination of the alpha position is crucial to determine the trajectory of the neutron. Existing API systems have several limitations which a semiconductor-based API detector placed inside the vacuum chamber should not present. The semiconductor material can be either silicon or diamond. In particular, large and fast signals are generated by the alpha interactions in these materials. A pixelated API detector will measure the time and hit position of the alphas produced in the reaction. However, during the lifetime of the generator, the semiconductor detector will be exposed to an intense flux of alpha particles that will degrade its performance over time. To assess the radiation hardness of silicon and diamond against the alpha particles, we exposed single diodes made of either of the two materials to a 5 MeV alpha flux generated by an 241Am radioactive source. During irradiation, the diodes were biased and mounted on current-sensitive preamplifier boards. We have therefore been able to measure insitu the evolution of the waveforms as the damage was accumulating in their substrates.
AB - An Associated Particle Imaging (API) system consists of a high vacuum chamber where deuterium ions are accelerated on a tritium-loaded target, resulting in alpha particles and neutrons emitted back-to-back, the latter escaping the chamber and used, for example, for tomography of a high-Z sample. An accurate determination of the alpha position is crucial to determine the trajectory of the neutron. Existing API systems have several limitations which a semiconductor-based API detector placed inside the vacuum chamber should not present. The semiconductor material can be either silicon or diamond. In particular, large and fast signals are generated by the alpha interactions in these materials. A pixelated API detector will measure the time and hit position of the alphas produced in the reaction. However, during the lifetime of the generator, the semiconductor detector will be exposed to an intense flux of alpha particles that will degrade its performance over time. To assess the radiation hardness of silicon and diamond against the alpha particles, we exposed single diodes made of either of the two materials to a 5 MeV alpha flux generated by an 241Am radioactive source. During irradiation, the diodes were biased and mounted on current-sensitive preamplifier boards. We have therefore been able to measure insitu the evolution of the waveforms as the damage was accumulating in their substrates.
UR - http://www.scopus.com/inward/record.url?scp=85124684387&partnerID=8YFLogxK
U2 - 10.1109/NSS/MIC42677.2020.9508038
DO - 10.1109/NSS/MIC42677.2020.9508038
M3 - Conference contribution
AN - SCOPUS:85124684387
T3 - 2020 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2020
BT - 2020 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2020
Y2 - 31 October 2020 through 7 November 2020
ER -