Evaluation of NH4F/H2O2 effectiveness as a surface passivation agent for Cd1-xZnxTe crystals

  • G. W. Wright
  • , R. B. James
  • , D. Chinn
  • , B. A. Brunett
  • , R. W. Olsen
  • , J. van Scyoc
  • , M. Clift
  • , A. Burger
  • , K. Chattopadhyay
  • , D. Shi
  • , R. Wingfield

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

Various passivating agents that reduced the surface leakage current of CZT crystals have been previously reported. In one of the studies, NH4F/H2O2 was identified as a promising passivation agent for CZT. We now present a study that includes the effect of NH4F/H2O2 treatment on the surface properties and detector performance. An elemental depth profile was obtained via Auger Electron Spectroscopy. Furthermore, X-ray Photoelectron Spectroscopy acquired at different processing times to identify the chemical states of the elemental species that composed the dielectric layer. It was found that the NH4F/H2O2 surface passivation significantly improved the sensitivity and energy resolution of CZT detectors. Furthermore, the NH4F/H2O2 treatment did not attack the Au electrodes, which eliminated the need to protect the contacts in the detector fabrication process.

Original languageEnglish
Pages (from-to)324-335
Number of pages12
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4141
Issue number1
DOIs
StatePublished - Nov 21 2000

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