Etch pit density in single crystal CdZnTe and CdTe correlated with growth parameters

Cody J. Havrilak, Kelly A. Jones, Kelvin G. Lynn

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Surface dislocations were revealed in single crystal CdZnTe and CdTe samples using chemical etching. Dislocation etch pits on the Te dominant (111)B face were studied under optical, infrared and scanning electron microscopes. The samples came from crystal ingots which were grown using different chemical compositions and applied growth parameters. From these ingots, etch pit density, shape and distribution were examined and compared with the varying growth techniques. Resistivity and mobility-lifetime product, μτe, properties of the detectors were measured. A combination of detector grade and non-detector grade ingots were tested. Near infra-red microscopy was used to compare the amount of secondary phases present in the bulk of the crystals with dislocation etch pits on their surface.

Original languageEnglish
Title of host publicationHard X-Ray, Gamma-Ray, and Neutron Detector Physics XIII
DOIs
StatePublished - 2011
Externally publishedYes
EventHard X-Ray, Gamma-Ray, and Neutron Detector Physics XIII - San Diego, CA, United States
Duration: Aug 22 2011Aug 24 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8142
ISSN (Print)0277-786X

Conference

ConferenceHard X-Ray, Gamma-Ray, and Neutron Detector Physics XIII
Country/TerritoryUnited States
CitySan Diego, CA
Period08/22/1108/24/11

Keywords

  • CdZnTe detectors
  • Everson etch
  • IR microscopy
  • dislocations
  • etch pit density
  • etching
  • radiation detectors
  • secondary phases

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