Original language | English |
---|---|
Pages (from-to) | 793 |
Number of pages | 1 |
Journal | Applied Physics Letters |
Volume | 56 |
Issue number | 8 |
DOIs |
|
State | Published - 1990 |
Erratum: Rapid heteroepitaxial growth of Ge films on (100) GaAs by pulsed supersonic free-jet chemical beam epitaxy (Applied Physics Letters (1989) 55 (1008))
Djula Eres, D. H. Lowndes, J. Z. Tischler
Research output: Contribution to journal › Comment/debate