Erratum: Rapid heteroepitaxial growth of Ge films on (100) GaAs by pulsed supersonic free-jet chemical beam epitaxy (Applied Physics Letters (1989) 55 (1008))

Djula Eres, D. H. Lowndes, J. Z. Tischler

Research output: Contribution to journalComment/debate

Original languageEnglish
Pages (from-to)793
Number of pages1
JournalApplied Physics Letters
Volume56
Issue number8
DOIs
StatePublished - 1990

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