Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))

Chien Fong Lo; Lu Liu; Fan Ren; Stephen J. Pearton; Brent P. Gila; Hong Yeol Kim; Jihyun Kim; Oleg Laboutin; Yu Cao; Jerry W. Johnson; Ivan I. Kravchenko

doi:10.1116/1.4737150

Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))

Chien Fong Lo
, Lu Liu
, Fan Ren
, Stephen J. Pearton
, Brent P. Gila
, Hong Yeol Kim
, Jihyun Kim
, Oleg Laboutin
, Yu Cao
, Jerry W. Johnson
, Ivan I. Kravchenko

Research output: Contribution to journal › Comment/debate

Original language	English
Article number	043401
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	30
Issue number	4
DOIs	https://doi.org/10.1116/1.4737150
State	Published - Jul 2012

Access to Document

10.1116/1.4737150

Cite this

Lo, C. F., Liu, L., Ren, F., Pearton, S. J., Gila, B. P., Kim, H. Y., Kim, J., Laboutin, O., Cao, Y., Johnson, J. W., & Kravchenko, I. I. (2012). Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206)). Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 30(4), Article 043401. https://doi.org/10.1116/1.4737150

Lo, Chien Fong ; Liu, Lu ; Ren, Fan et al. / Erratum : Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206)). In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 2012 ; Vol. 30, No. 4.

@article{55177176c031430c9307e96e67d28b30,

title = "Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))",

author = "Lo, \{Chien Fong\} and Lu Liu and Fan Ren and Pearton, \{Stephen J.\} and Gila, \{Brent P.\} and Kim, \{Hong Yeol\} and Jihyun Kim and Oleg Laboutin and Yu Cao and Johnson, \{Jerry W.\} and Kravchenko, \{Ivan I.\}",

year = "2012",

month = jul,

doi = "10.1116/1.4737150",

language = "English",

volume = "30",

journal = "Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics",

issn = "2166-2746",

publisher = "American Institute of Physics",

number = "4",

}

Lo, CF, Liu, L, Ren, F, Pearton, SJ, Gila, BP, Kim, HY, Kim, J, Laboutin, O, Cao, Y, Johnson, JW & Kravchenko, II 2012, 'Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))', Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, vol. 30, no. 4, 043401. https://doi.org/10.1116/1.4737150

Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206)). / Lo, Chien Fong; Liu, Lu; Ren, Fan et al.
In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 30, No. 4, 043401, 07.2012.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Erratum

T2 - Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))

AU - Lo, Chien Fong

AU - Liu, Lu

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Gila, Brent P.

AU - Kim, Hong Yeol

AU - Kim, Jihyun

AU - Laboutin, Oleg

AU - Cao, Yu

AU - Johnson, Jerry W.

AU - Kravchenko, Ivan I.

PY - 2012/7

Y1 - 2012/7

UR - https://www.scopus.com/pages/publications/84864194330

U2 - 10.1116/1.4737150

DO - 10.1116/1.4737150

M3 - Comment/debate

AN - SCOPUS:84864194330

SN - 2166-2746

VL - 30

JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

IS - 4

M1 - 043401

ER -

Lo CF, Liu L, Ren F, Pearton SJ, Gila BP, Kim HY et al. Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206)). Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 2012 Jul;30(4):043401. doi: 10.1116/1.4737150

Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))

Access to Document

Other files and links

Cite this