Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))

Chien Fong Lo; Lu Liu; Fan Ren; Stephen J. Pearton; Brent P. Gila; Hong Yeol Kim; Jihyun Kim; Oleg Laboutin; Yu Cao; Jerry W. Johnson; Ivan I. Kravchenko

doi:10.1116/1.4737150

Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))

Chien Fong Lo, Lu Liu, Fan Ren, Stephen J. Pearton, Brent P. Gila, Hong Yeol Kim, Jihyun Kim, Oleg Laboutin, Yu Cao, Jerry W. Johnson, Ivan I. Kravchenko

Nanofabrication Research Laboratory

Research output: Contribution to journal › Comment/debate

Original language	English
Article number	043401
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	30
Issue number	4
DOIs	https://doi.org/10.1116/1.4737150
State	Published - Jul 2012

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10.1116/1.4737150

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Lo, C. F., Liu, L., Ren, F., Pearton, S. J., Gila, B. P., Kim, H. Y., Kim, J., Laboutin, O., Cao, Y., Johnson, J. W., & Kravchenko, I. I. (2012). Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206)). Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 30(4), Article 043401. https://doi.org/10.1116/1.4737150

Lo, Chien Fong ; Liu, Lu ; Ren, Fan et al. / Erratum : Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206)). In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 2012 ; Vol. 30, No. 4.

@article{55177176c031430c9307e96e67d28b30,

title = "Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))",

author = "Lo, {Chien Fong} and Lu Liu and Fan Ren and Pearton, {Stephen J.} and Gila, {Brent P.} and Kim, {Hong Yeol} and Jihyun Kim and Oleg Laboutin and Yu Cao and Johnson, {Jerry W.} and Kravchenko, {Ivan I.}",

year = "2012",

month = jul,

doi = "10.1116/1.4737150",

language = "English",

volume = "30",

journal = "Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics",

issn = "2166-2746",

publisher = "American Institute of Physics",

number = "4",

}

Lo, CF, Liu, L, Ren, F, Pearton, SJ, Gila, BP, Kim, HY, Kim, J, Laboutin, O, Cao, Y, Johnson, JW & Kravchenko, II 2012, 'Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))', Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, vol. 30, no. 4, 043401. https://doi.org/10.1116/1.4737150

Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206)). / Lo, Chien Fong; Liu, Lu; Ren, Fan et al.
In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 30, No. 4, 043401, 07.2012.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Erratum

T2 - Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))

AU - Lo, Chien Fong

AU - Liu, Lu

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Gila, Brent P.

AU - Kim, Hong Yeol

AU - Kim, Jihyun

AU - Laboutin, Oleg

AU - Cao, Yu

AU - Johnson, Jerry W.

AU - Kravchenko, Ivan I.

PY - 2012/7

Y1 - 2012/7

UR - http://www.scopus.com/inward/record.url?scp=84864194330&partnerID=8YFLogxK

U2 - 10.1116/1.4737150

DO - 10.1116/1.4737150

M3 - Comment/debate

AN - SCOPUS:84864194330

SN - 2166-2746

VL - 30

JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

IS - 4

M1 - 043401

ER -

Lo CF, Liu L, Ren F, Pearton SJ, Gila BP, Kim HY et al. Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206)). Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 2012 Jul;30(4):043401. doi: 10.1116/1.4737150

Erratum: Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2012) 30 (041206))

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