Erratum: Phonons, magnons, and lattice thermal transport in antiferromagnetic semiconductor MnTe (Physical Review Materials (2019) 3 (025403) DOI: 10.1103/PhysRevMaterials.3.025403)

Sai Mu, Raphaël P. Hermann, Stéphane Gorsse, Huaizhou Zhao, Michael E. Manley, Randy S. Fishman, L. Lindsay

Research output: Contribution to journalComment/debate

Abstract

One sentence in the caption of Table I is rephrased, and several references are modified. These modifcations do not affect the results, discussions, or the conclusions of the paper. (1) To avoid confusion, we rephrase "As defined, gative Jn indicates the antiferromagnetic coupling" in the caption of Table I to "As defined in Eq. (3), the presented Jn is the exchange interaction between normalized spins, and negative Jn indicates the antiferromagnetic coupling." (2) The description of local moments of previous work (on p. 4) should read: "Employing Ueff=4.8eV, the calculated local moment on Mn sites in the ground state is about 4.55μB, consistent with previous work: 4.76μB [9], 4.66μB [38], 4.27μB [14], 4.52μB [13]."(3) The reference regarding magnetic susceptibility measurements (on p. 5) should read: "Magnetic susceptibility measurements [48] of α-MnTe give a Curie-Weiss temperature... ."(4) The caption of Fig. 3(a) (on p. 5) should read: "Measured data are also shown for magnons at T=11K (blue circles) [9], an M-point magnon at T=300K (blue triangle), and phonons at T=300K (black circles) [49]."The corresponding discussion on the same page should read: "Figure 3(a) gives the calculated spin-wave (magnon) dispersion for the antiferromagnetic state of α-MnTe compared with measured dispersion data at T=11K [9] and a single data point at T=300K [49]. Also given are the calculated and measured [49] phonon dispersions".

Original languageEnglish
Article number039901
JournalPhysical Review Materials
Volume3
Issue number3
DOIs
StatePublished - Mar 22 2019

Fingerprint

Dive into the research topics of 'Erratum: Phonons, magnons, and lattice thermal transport in antiferromagnetic semiconductor MnTe (Physical Review Materials (2019) 3 (025403) DOI: 10.1103/PhysRevMaterials.3.025403)'. Together they form a unique fingerprint.

Cite this