Erratum: Mobility improvement and temperature dependence in MoSe 2 field-effect transistors on parylene-C substrate (ACS Nano (2014) 8 (5079-5088). DOI: 10.1021/nn501150r)

Bhim Chamlagain; Qing Li; Nirmal Jeevi Ghimire; Hsun Jen Chuang; Meeghage Madusanka Perera; Honggen Tu; Yong Xu; Minghu Pan; Di Xiao; Jiaqiang Yan; David Mandrus; Zhixian Zhou

doi:10.1021/nn503807d

Erratum: Mobility improvement and temperature dependence in MoSe ₂ field-effect transistors on parylene-C substrate (ACS Nano (2014) 8 (5079-5088). DOI: 10.1021/nn501150r)

Bhim Chamlagain
, Qing Li
, Nirmal Jeevi Ghimire
, Hsun Jen Chuang
, Meeghage Madusanka Perera
, Honggen Tu
, Yong Xu
, Minghu Pan
, Di Xiao
, Jiaqiang Yan
, David Mandrus
, Zhixian Zhou

Correlated Electron Materials

Research output: Contribution to journal › Comment/debate

5 Scopus citations

Original language	English
Pages (from-to)	8710
Number of pages	1
Journal	ACS Nano
Volume	8
Issue number	8
DOIs	https://doi.org/10.1021/nn503807d
State	Published - Aug 26 2014

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Chamlagain, B., Li, Q., Ghimire, N. J., Chuang, H. J., Perera, M. M., Tu, H., Xu, Y., Pan, M., Xiao, D., Yan, J., Mandrus, D., & Zhou, Z. (2014). Erratum: Mobility improvement and temperature dependence in MoSe ₂ field-effect transistors on parylene-C substrate (ACS Nano (2014) 8 (5079-5088). DOI: 10.1021/nn501150r). ACS Nano, 8(8), 8710. https://doi.org/10.1021/nn503807d

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author = "Bhim Chamlagain and Qing Li and Ghimire, \{Nirmal Jeevi\} and Chuang, \{Hsun Jen\} and Perera, \{Meeghage Madusanka\} and Honggen Tu and Yong Xu and Minghu Pan and Di Xiao and Jiaqiang Yan and David Mandrus and Zhixian Zhou",

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doi = "10.1021/nn503807d",

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T2 - Mobility improvement and temperature dependence in MoSe 2 field-effect transistors on parylene-C substrate (ACS Nano (2014) 8 (5079-5088). DOI: 10.1021/nn501150r)

AU - Chamlagain, Bhim

AU - Li, Qing

AU - Ghimire, Nirmal Jeevi

AU - Chuang, Hsun Jen

AU - Perera, Meeghage Madusanka

AU - Tu, Honggen

AU - Xu, Yong

AU - Pan, Minghu

AU - Xiao, Di

AU - Yan, Jiaqiang

AU - Mandrus, David

AU - Zhou, Zhixian

PY - 2014/8/26

Y1 - 2014/8/26

UR - https://www.scopus.com/pages/publications/84906691692

U2 - 10.1021/nn503807d

DO - 10.1021/nn503807d

M3 - Comment/debate

AN - SCOPUS:84906691692

SN - 1936-0851

VL - 8

SP - 8710

JO - ACS Nano

JF - ACS Nano

IS - 8

ER -

Erratum: Mobility improvement and temperature dependence in MoSe 2 field-effect transistors on parylene-C substrate (ACS Nano (2014) 8 (5079-5088). DOI: 10.1021/nn501150r)

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Erratum: Mobility improvement and temperature dependence in MoSe ₂ field-effect transistors on parylene-C substrate (ACS Nano (2014) 8 (5079-5088). DOI: 10.1021/nn501150r)