Erratum: Mobility improvement and temperature dependence in MoSe 2 field-effect transistors on parylene-C substrate (ACS Nano (2014) 8 (5079-5088). DOI: 10.1021/nn501150r)

Bhim Chamlagain; Qing Li; Nirmal Jeevi Ghimire; Hsun Jen Chuang; Meeghage Madusanka Perera; Honggen Tu; Yong Xu; Minghu Pan; Di Xiao; Jiaqiang Yan; David Mandrus; Zhixian Zhou

doi:10.1021/nn503807d

Erratum: Mobility improvement and temperature dependence in MoSe ₂ field-effect transistors on parylene-C substrate (ACS Nano (2014) 8 (5079-5088). DOI: 10.1021/nn501150r)

Bhim Chamlagain, Qing Li, Nirmal Jeevi Ghimire, Hsun Jen Chuang, Meeghage Madusanka Perera, Honggen Tu, Yong Xu, Minghu Pan, Di Xiao, Jiaqiang Yan, David Mandrus, Zhixian Zhou

Correlated Electron Materials

Research output: Contribution to journal › Comment/debate

3 Scopus citations

Original language	English
Pages (from-to)	8710
Number of pages	1
Journal	ACS Nano
Volume	8
Issue number	8
DOIs	https://doi.org/10.1021/nn503807d
State	Published - Aug 26 2014

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Chamlagain, B., Li, Q., Ghimire, N. J., Chuang, H. J., Perera, M. M., Tu, H., Xu, Y., Pan, M., Xiao, D., Yan, J., Mandrus, D., & Zhou, Z. (2014). Erratum: Mobility improvement and temperature dependence in MoSe ₂ field-effect transistors on parylene-C substrate (ACS Nano (2014) 8 (5079-5088). DOI: 10.1021/nn501150r). ACS Nano, 8(8), 8710. https://doi.org/10.1021/nn503807d

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author = "Bhim Chamlagain and Qing Li and Ghimire, {Nirmal Jeevi} and Chuang, {Hsun Jen} and Perera, {Meeghage Madusanka} and Honggen Tu and Yong Xu and Minghu Pan and Di Xiao and Jiaqiang Yan and David Mandrus and Zhixian Zhou",

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month = aug,

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doi = "10.1021/nn503807d",

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T2 - Mobility improvement and temperature dependence in MoSe 2 field-effect transistors on parylene-C substrate (ACS Nano (2014) 8 (5079-5088). DOI: 10.1021/nn501150r)

AU - Chamlagain, Bhim

AU - Li, Qing

AU - Ghimire, Nirmal Jeevi

AU - Chuang, Hsun Jen

AU - Perera, Meeghage Madusanka

AU - Tu, Honggen

AU - Xu, Yong

AU - Pan, Minghu

AU - Xiao, Di

AU - Yan, Jiaqiang

AU - Mandrus, David

AU - Zhou, Zhixian

PY - 2014/8/26

Y1 - 2014/8/26

UR - http://www.scopus.com/inward/record.url?scp=84906691692&partnerID=8YFLogxK

U2 - 10.1021/nn503807d

DO - 10.1021/nn503807d

M3 - Comment/debate

AN - SCOPUS:84906691692

SN - 1936-0851

VL - 8

SP - 8710

JO - ACS Nano

JF - ACS Nano

IS - 8

ER -

Erratum: Mobility improvement and temperature dependence in MoSe 2 field-effect transistors on parylene-C substrate (ACS Nano (2014) 8 (5079-5088). DOI: 10.1021/nn501150r)

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Erratum: Mobility improvement and temperature dependence in MoSe ₂ field-effect transistors on parylene-C substrate (ACS Nano (2014) 8 (5079-5088). DOI: 10.1021/nn501150r)