Erratum: First-Principles Assessment of CdTe as a Tunnel Barrier at the α-Sn/InSb Interface (ACS Applied Materials and Interfaces (2023) 15: 12 (16288−16298) DOI: 10.1021/acsami.3c00323)

The original version of this article (https://pubs.acs.org/doi/full/10.1021/acsami.3c00323) contains errors in the affiliations of An-Hsi Chen, Yu-Hao Chang, Aaron Engel, Vladimir N. Strocov, Moï ra Hocevar, Chris Palmstrøm, and Noa Marom. These errors are misprints made by the publisher. They do not affect the scientific content of the paper. The correct affiliations are provided here: An-Hsi Chen: UniversitéGrenoble Alpes, CNRS, Grenoble INP, Institut Neel, ́ 38000 Grenoble, France. Yu-Hao Chang: Materials Department, University of California-Santa Barbara, Santa Barbara, California 93106, United States. Aaron Engel: Materials Department, University of California-Santa Barbara, Santa Barbara, California 93106, United States. Vladimir N. Strocov: Paul Scherrer Institut, Swiss Light Source, CH-5232 Villigen PSI, Switzerland. Moï ra Hocevar: Université Grenoble Alpes, CNRS, Grenoble INP, Institut Neel, ́ 38000 Grenoble, France. Chris Palmstrøm: Materials Department and Department of Electrical and Computer Engineering, University of California-Santa Barbara, Santa Barbara, California 93106, United States. Noa Marom: Department of Materials Science and Engineering, Department of Physics, and Department of Chemistry, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States.