Erratum: “Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition” [J. Mater. Res. 8, 1086 (1993)]

Brian W. Sheldon, Theodore M. Besmann, Karren L. More, Thomas S. Moss

Research output: Contribution to journal › Comment/debate

2 Scopus citations

Original language	English
Pages (from-to)	2416
Number of pages	1
Journal	Journal of Materials Research
Volume	8
Issue number	9
DOIs	https://doi.org/10.1557/JMR.1993.2416
State	Published - Sep 1993

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@article{63f90db1f9064278a0542cfe1ec4f0fa,

title = "Erratum: “Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition” [J. Mater. Res. 8, 1086 (1993)]",

author = "Sheldon, {Brian W.} and Besmann, {Theodore M.} and More, {Karren L.} and Moss, {Thomas S.}",

year = "1993",

month = sep,

doi = "10.1557/JMR.1993.2416",

language = "English",

volume = "8",

pages = "2416",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Springer",

number = "9",

}

TY - JOUR

T1 - Erratum

T2 - “Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition” [J. Mater. Res. 8, 1086 (1993)]

AU - Sheldon, Brian W.

AU - Besmann, Theodore M.

AU - More, Karren L.

AU - Moss, Thomas S.

PY - 1993/9

Y1 - 1993/9

UR - http://www.scopus.com/inward/record.url?scp=33947355257&partnerID=8YFLogxK

U2 - 10.1557/JMR.1993.2416

DO - 10.1557/JMR.1993.2416

M3 - Comment/debate

AN - SCOPUS:33947355257

SN - 0884-2914

VL - 8

SP - 2416

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 9

ER -