TY - JOUR
T1 - Erratum
T2 - Epitaxial growth and electrical properties of VO2 on [LaAlO3]0.3[Sr2AlTaO6]0.7 (111) substrate (Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films (2018) A36 (061506) DOI: 10.1116/1.5045358)
AU - Liu, Yang
AU - Niu, Shanyuan
AU - Orvis, Thomas
AU - Zhang, Haimeng
AU - Zhao, Huan
AU - Wang, Han
AU - Ravichandran, Jayakanth
N1 - Publisher Copyright:
© 2019 AVS.
PY - 2019/5/1
Y1 - 2019/5/1
N2 - In Fig. 3 of the published article,1 the resistivity values were miscalculated to be ∼4.53 times lower by not considering the shape factor, during the conversion of the four probe resistance into the sheet resistance. The corrected figure with revised values is shown here. The error was in the figure only, and the corresponding discussion and the conclusions in the article were not affected. The authors thank Zhe Cheng, Georgia Institute of Technology, for noticing and informing us of the error. (Figure Presented).
AB - In Fig. 3 of the published article,1 the resistivity values were miscalculated to be ∼4.53 times lower by not considering the shape factor, during the conversion of the four probe resistance into the sheet resistance. The corrected figure with revised values is shown here. The error was in the figure only, and the corresponding discussion and the conclusions in the article were not affected. The authors thank Zhe Cheng, Georgia Institute of Technology, for noticing and informing us of the error. (Figure Presented).
UR - http://www.scopus.com/inward/record.url?scp=85062832278&partnerID=8YFLogxK
U2 - 10.1116/1.5093041
DO - 10.1116/1.5093041
M3 - Comment/debate
AN - SCOPUS:85062832278
SN - 0734-2101
VL - 37
JO - Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
JF - Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
IS - 3
M1 - 033401
ER -