Epitaxial Zn1-xMgxO films grown on (1 1 1) Si by pulsed laser deposition

X. H. Pan; W. Guo; Z. Z. Ye; B. Liu; Y. Che; C. T. Nelson; Y. Zhang; W. Tian; D. G. Schlom; X. Q. Pan

doi:10.1016/j.cplett.2009.12.046

Epitaxial Zn_1-xMg_xO films grown on (1 1 1) Si by pulsed laser deposition

X. H. Pan, W. Guo, Z. Z. Ye, B. Liu, Y. Che, C. T. Nelson, Y. Zhang, W. Tian, D. G. Schlom, X. Q. Pan

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Zn_1-xMg_xO thin films are epitaxially grown on (1 1 1) Si substrates using intervening epitaxial Lu₂O₃ buffer layers by pulsed laser deposition. Lu₂O₃ buffer layer on Si substrate is essential to the Zn_1-xMg_xO epitaxial growth. X-ray diffraction, transmission electron microscopy, atomic force microscopy and photoluminescence measurements reveal that the Zn_1-xMg_xO films have high quality structural and optical properties. The films with thickness of 650 nm have a resistivity of 4.18 Ω cm, a Hall mobility of 16.97 cm² V^-1 s^-1, and an electron concentration of 8.80 × 10¹⁶ cm^-3 at room temperature.

Original language	English
Pages (from-to)	363-366
Number of pages	4
Journal	Chemical Physics Letters
Volume	485
Issue number	4-6
DOIs	https://doi.org/10.1016/j.cplett.2009.12.046
State	Published - Jan 26 2010
Externally published	Yes

Access to Document

10.1016/j.cplett.2009.12.046

Cite this

@article{49f985667f954e8cacba03a36f8ed01a,

title = "Epitaxial Zn1-xMgxO films grown on (1 1 1) Si by pulsed laser deposition",

abstract = "Zn1-xMgxO thin films are epitaxially grown on (1 1 1) Si substrates using intervening epitaxial Lu2O3 buffer layers by pulsed laser deposition. Lu2O3 buffer layer on Si substrate is essential to the Zn1-xMgxO epitaxial growth. X-ray diffraction, transmission electron microscopy, atomic force microscopy and photoluminescence measurements reveal that the Zn1-xMgxO films have high quality structural and optical properties. The films with thickness of 650 nm have a resistivity of 4.18 Ω cm, a Hall mobility of 16.97 cm2 V-1 s-1, and an electron concentration of 8.80 × 1016 cm-3 at room temperature.",

author = "Pan, {X. H.} and W. Guo and Ye, {Z. Z.} and B. Liu and Y. Che and Nelson, {C. T.} and Y. Zhang and W. Tian and Schlom, {D. G.} and Pan, {X. Q.}",

year = "2010",

month = jan,

day = "26",

doi = "10.1016/j.cplett.2009.12.046",

language = "English",

volume = "485",

pages = "363--366",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier",

number = "4-6",

}

TY - JOUR

T1 - Epitaxial Zn1-xMgxO films grown on (1 1 1) Si by pulsed laser deposition

AU - Pan, X. H.

AU - Guo, W.

AU - Ye, Z. Z.

AU - Liu, B.

AU - Che, Y.

AU - Nelson, C. T.

AU - Zhang, Y.

AU - Tian, W.

AU - Schlom, D. G.

AU - Pan, X. Q.

PY - 2010/1/26

Y1 - 2010/1/26

N2 - Zn1-xMgxO thin films are epitaxially grown on (1 1 1) Si substrates using intervening epitaxial Lu2O3 buffer layers by pulsed laser deposition. Lu2O3 buffer layer on Si substrate is essential to the Zn1-xMgxO epitaxial growth. X-ray diffraction, transmission electron microscopy, atomic force microscopy and photoluminescence measurements reveal that the Zn1-xMgxO films have high quality structural and optical properties. The films with thickness of 650 nm have a resistivity of 4.18 Ω cm, a Hall mobility of 16.97 cm2 V-1 s-1, and an electron concentration of 8.80 × 1016 cm-3 at room temperature.

AB - Zn1-xMgxO thin films are epitaxially grown on (1 1 1) Si substrates using intervening epitaxial Lu2O3 buffer layers by pulsed laser deposition. Lu2O3 buffer layer on Si substrate is essential to the Zn1-xMgxO epitaxial growth. X-ray diffraction, transmission electron microscopy, atomic force microscopy and photoluminescence measurements reveal that the Zn1-xMgxO films have high quality structural and optical properties. The films with thickness of 650 nm have a resistivity of 4.18 Ω cm, a Hall mobility of 16.97 cm2 V-1 s-1, and an electron concentration of 8.80 × 1016 cm-3 at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=74049104542&partnerID=8YFLogxK

U2 - 10.1016/j.cplett.2009.12.046

DO - 10.1016/j.cplett.2009.12.046

M3 - Article

AN - SCOPUS:74049104542

SN - 0009-2614

VL - 485

SP - 363

EP - 366

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 4-6

ER -

Epitaxial Zn_1-xMg_xO films grown on (1 1 1) Si by pulsed laser deposition

Abstract

Access to Document

Other files and links

Fingerprint

Cite this