Epitaxial SrTi O3 film on silicon with narrow rocking curve despite huge defect density

Z. Wang; B. H. Goodge; D. J. Baek; M. J. Zachman; X. Huang; X. Bai; C. M. Brooks; H. Paik; A. B. Mei; J. D. Brock; J. P. Maria; L. F. Kourkoutis; D. G. Schlom

doi:10.1103/PhysRevMaterials.3.073403

Epitaxial SrTi O3 film on silicon with narrow rocking curve despite huge defect density

Z. Wang, B. H. Goodge, D. J. Baek, M. J. Zachman, X. Huang, X. Bai, C. M. Brooks, H. Paik, A. B. Mei, J. D. Brock, J. P. Maria, L. F. Kourkoutis, D. G. Schlom

Materials MicroAnalysis

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14 Scopus citations

Abstract

The structural perfection and defect microstructure of epitaxial (001) SrTiO3 films grown on (001) Si was assessed by a combination of x-ray diffraction and scanning transmission electron microscopy. Conditions were identified that yield 002 SrTiO3 rocking curves with full width at half-maximum below 0.03° for films ranging from 2 to 300 nm thick, but this is because this particular peak is insensitive to the ∼8×1011cm-2 density of threading dislocations with pure edge character and extended defects containing dislocations and out-of-phase boundaries. Our results show that one narrow rocking curve peak is insufficient to characterize the structural perfection of epitaxial films.

Original language	English
Article number	073403
Journal	Physical Review Materials
Volume	3
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevMaterials.3.073403
State	Published - Jul 29 2019

Funding

Z.W. and D.G.S. gratefully acknowledge the support from a GRO “functional oxides” project from the Samsung Advanced Institute of Technology. H.P. acknowledges support by the National Science Foundation [Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM)] under Cooperative Agreement No. DMR-1539918. B.H.G. and L.F.K. acknowledge support by the Department of Defense Air Force Office of Scientific Research (No. FA 9550-16-1-0305). J.P.M. acknowledges support from NSF Ceramics 1610844. The synchrotron-based x-ray experiment was conducted at the Cornell High Energy Synchrotron Source (CHESS), which is supported by the National Science Foundation under Award No. DMR-1332208. This work made use of the Cornell Center for Materials Research (CCMR) Shared Facilities, which are supported through the NSF MRSEC program (No. DMR-1719875). The FEI Titan Themis 300 was acquired through No. NSF-MRI-1429155, with additional support from Cornell University, the Weill Institute, and the Kavli Institute at Cornell. Substrate preparation was performed in part at the Cornell NanoScale Facility, a member of the National Nanotechnology Coordinated Infrastructure (NNCI), which is supported by the NSF (Grant No. ECCS-15420819).

Funders	Funder number
NSF MRSEC
National Science Foundation	1719875, 1610844
Air Force Office of Scientific Research
Samsung Advanced Institute of Technology

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10.1103/PhysRevMaterials.3.073403

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abstract = "The structural perfection and defect microstructure of epitaxial (001) SrTiO3 films grown on (001) Si was assessed by a combination of x-ray diffraction and scanning transmission electron microscopy. Conditions were identified that yield 002 SrTiO3 rocking curves with full width at half-maximum below 0.03° for films ranging from 2 to 300 nm thick, but this is because this particular peak is insensitive to the ∼8×1011cm-2 density of threading dislocations with pure edge character and extended defects containing dislocations and out-of-phase boundaries. Our results show that one narrow rocking curve peak is insufficient to characterize the structural perfection of epitaxial films.",

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AU - Bai, X.

AU - Brooks, C. M.

AU - Paik, H.

AU - Mei, A. B.

AU - Brock, J. D.

AU - Maria, J. P.

AU - Kourkoutis, L. F.

AU - Schlom, D. G.

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AB - The structural perfection and defect microstructure of epitaxial (001) SrTiO3 films grown on (001) Si was assessed by a combination of x-ray diffraction and scanning transmission electron microscopy. Conditions were identified that yield 002 SrTiO3 rocking curves with full width at half-maximum below 0.03° for films ranging from 2 to 300 nm thick, but this is because this particular peak is insensitive to the ∼8×1011cm-2 density of threading dislocations with pure edge character and extended defects containing dislocations and out-of-phase boundaries. Our results show that one narrow rocking curve peak is insufficient to characterize the structural perfection of epitaxial films.

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Epitaxial SrTi O3 film on silicon with narrow rocking curve despite huge defect density

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