Epitaxial Pb(Mg1/3Nb2/3)O3 thin films synthesized by metal-organic chemical vapor deposition

G. R. Bai; S. K. Streiffer; P. K. Baumann; O. Auciello; K. Ghosh; S. Stemmer; A. Munkholm; Carol Thompson; R. A. Rao; C. B. Eom

doi:10.1063/1.126538

Epitaxial Pb(Mg_1/3Nb_2/3)O₃ thin films synthesized by metal-organic chemical vapor deposition

G. R. Bai, S. K. Streiffer, P. K. Baumann, O. Auciello, K. Ghosh, S. Stemmer, A. Munkholm, Carol Thompson, R. A. Rao, C. B. Eom

Research output: Contribution to journal › Article › peer-review

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Abstract

Metal-organic chemical vapor deposition was used to prepare Pb(Mg_1/3Nb_2/3)O₃ (PMN) thin films on (001) SrTiO₃ and SrRuO₃/SrTiO₃ substrates, using solid Mg β-diketonate as the Mg precursor. Parameters including the precursor ratio in the vapor phase, growth temperature, growth rate, and reaction pressure in the reactor chamber were varied in order to determine suitable growth conditions for producing phase-pure, epitaxial PMN films. A cube-on-cube orientation relationship between the thin film and the SrTiO₃ substrate was found, with a (001) rocking curve width of 0.1°, and in-plane rocking-curve width of 0.8°. The root-mean-square surface roughness of a 200-nm-thick film on SrTiO₃ was 2 to 3 nm as measured by scanning probe microscopy. The zero-bias dielectric constant and loss measured at room temperature and 10 kHz for a 200-nm-thick film on SrRuO₃/SrTiO₃ were approximately 1100 and 2%, respectively. The remnant polarization for this film was 16 μC/cm².

Original language	English
Pages (from-to)	3106-3108
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	21
DOIs	https://doi.org/10.1063/1.126538
State	Published - May 22 2000
Externally published	Yes

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@article{9350e2ed8d174d1887a2cc0e99c346ab,

title = "Epitaxial Pb(Mg1/3Nb2/3)O3 thin films synthesized by metal-organic chemical vapor deposition",

abstract = "Metal-organic chemical vapor deposition was used to prepare Pb(Mg1/3Nb2/3)O3 (PMN) thin films on (001) SrTiO3 and SrRuO3/SrTiO3 substrates, using solid Mg β-diketonate as the Mg precursor. Parameters including the precursor ratio in the vapor phase, growth temperature, growth rate, and reaction pressure in the reactor chamber were varied in order to determine suitable growth conditions for producing phase-pure, epitaxial PMN films. A cube-on-cube orientation relationship between the thin film and the SrTiO3 substrate was found, with a (001) rocking curve width of 0.1°, and in-plane rocking-curve width of 0.8°. The root-mean-square surface roughness of a 200-nm-thick film on SrTiO3 was 2 to 3 nm as measured by scanning probe microscopy. The zero-bias dielectric constant and loss measured at room temperature and 10 kHz for a 200-nm-thick film on SrRuO3/SrTiO3 were approximately 1100 and 2%, respectively. The remnant polarization for this film was 16 μC/cm2.",

author = "Bai, {G. R.} and Streiffer, {S. K.} and Baumann, {P. K.} and O. Auciello and K. Ghosh and S. Stemmer and A. Munkholm and Carol Thompson and Rao, {R. A.} and Eom, {C. B.}",

year = "2000",

month = may,

day = "22",

doi = "10.1063/1.126538",

language = "English",

volume = "76",

pages = "3106--3108",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Epitaxial Pb(Mg1/3Nb2/3)O3 thin films synthesized by metal-organic chemical vapor deposition

AU - Bai, G. R.

AU - Streiffer, S. K.

AU - Baumann, P. K.

AU - Auciello, O.

AU - Ghosh, K.

AU - Stemmer, S.

AU - Munkholm, A.

AU - Thompson, Carol

AU - Rao, R. A.

AU - Eom, C. B.

PY - 2000/5/22

Y1 - 2000/5/22

N2 - Metal-organic chemical vapor deposition was used to prepare Pb(Mg1/3Nb2/3)O3 (PMN) thin films on (001) SrTiO3 and SrRuO3/SrTiO3 substrates, using solid Mg β-diketonate as the Mg precursor. Parameters including the precursor ratio in the vapor phase, growth temperature, growth rate, and reaction pressure in the reactor chamber were varied in order to determine suitable growth conditions for producing phase-pure, epitaxial PMN films. A cube-on-cube orientation relationship between the thin film and the SrTiO3 substrate was found, with a (001) rocking curve width of 0.1°, and in-plane rocking-curve width of 0.8°. The root-mean-square surface roughness of a 200-nm-thick film on SrTiO3 was 2 to 3 nm as measured by scanning probe microscopy. The zero-bias dielectric constant and loss measured at room temperature and 10 kHz for a 200-nm-thick film on SrRuO3/SrTiO3 were approximately 1100 and 2%, respectively. The remnant polarization for this film was 16 μC/cm2.

AB - Metal-organic chemical vapor deposition was used to prepare Pb(Mg1/3Nb2/3)O3 (PMN) thin films on (001) SrTiO3 and SrRuO3/SrTiO3 substrates, using solid Mg β-diketonate as the Mg precursor. Parameters including the precursor ratio in the vapor phase, growth temperature, growth rate, and reaction pressure in the reactor chamber were varied in order to determine suitable growth conditions for producing phase-pure, epitaxial PMN films. A cube-on-cube orientation relationship between the thin film and the SrTiO3 substrate was found, with a (001) rocking curve width of 0.1°, and in-plane rocking-curve width of 0.8°. The root-mean-square surface roughness of a 200-nm-thick film on SrTiO3 was 2 to 3 nm as measured by scanning probe microscopy. The zero-bias dielectric constant and loss measured at room temperature and 10 kHz for a 200-nm-thick film on SrRuO3/SrTiO3 were approximately 1100 and 2%, respectively. The remnant polarization for this film was 16 μC/cm2.

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DO - 10.1063/1.126538

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Epitaxial Pb(Mg_1/3Nb_2/3)O₃ thin films synthesized by metal-organic chemical vapor deposition

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