Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films grown by MOCVD

P. K. Baumann; S. K. Streiffer; G. R. Bai; K. Ghosh; O. Auciello; C. Thompson; S. Stemmer; R. A. Rao; C. B. Eom; F. Xu; S. Trolier-Mckinstry; D. J. Kim; J. P. Maria; A. I. Kingon

doi:10.1080/10584580108016896

Epitaxial Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ thin films grown by MOCVD

P. K. Baumann
, S. K. Streiffer
, G. R. Bai
, K. Ghosh
, O. Auciello
, C. Thompson
, S. Stemmer
, R. A. Rao
, C. B. Eom
, F. Xu
, S. Trolier-Mckinstry
, D. J. Kim
, J. P. Maria
, A. I. Kingon

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

Epitaxial Pb(Mg_1/3Nb_2/3)O₃ (PMN) and (1-x)(Pb(Mg_1/3Nb_2/3)O₃)-x (PbTiO₃) (PMN-PT) thin films have been deposited by metalorganic chemical vapor deposition at 700 - 780°C on (100) SrTiO₃ and SrRuO₃/SrTiO₃ substrates. Room temperature values of 900 and 1.5%, were measured for the zero-bias permittivity and loss respectively, at 10 kHz for 220 nm thick pure PMN films. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all samples. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with P_r≈18 μC/cm² was obtained. Initial piezoresponse results are discussed.

Original language	English
Pages (from-to)	1881/151-1888/158
Journal	Integrated Ferroelectrics
Volume	35
Issue number	1-4
DOIs	https://doi.org/10.1080/10584580108016896
State	Published - 2001
Externally published	Yes
Event	12th Interntional Symposium on Integrated Ferroelectrics - Aachen, Germany Duration: Mar 12 2000 → Mar 15 2000

Keywords

Impurity phases
MOCVD
PMN-PT
Piezoelectric properties

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10.1080/10584580108016896

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@article{4d47dc9ba44a45dca77a1c978cb55f7b,

title = "Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films grown by MOCVD",

abstract = "Epitaxial Pb(Mg1/3Nb2/3)O3 (PMN) and (1-x)(Pb(Mg1/3Nb2/3)O3)-x (PbTiO3) (PMN-PT) thin films have been deposited by metalorganic chemical vapor deposition at 700 - 780°C on (100) SrTiO3 and SrRuO3/SrTiO3 substrates. Room temperature values of 900 and 1.5\%, were measured for the zero-bias permittivity and loss respectively, at 10 kHz for 220 nm thick pure PMN films. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5\% were determined for all samples. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with Pr≈18 μC/cm2 was obtained. Initial piezoresponse results are discussed.",

keywords = "Impurity phases, MOCVD, PMN-PT, Piezoelectric properties",

author = "Baumann, \{P. K.\} and Streiffer, \{S. K.\} and Bai, \{G. R.\} and K. Ghosh and O. Auciello and C. Thompson and S. Stemmer and Rao, \{R. A.\} and Eom, \{C. B.\} and F. Xu and S. Trolier-Mckinstry and Kim, \{D. J.\} and Maria, \{J. P.\} and Kingon, \{A. I.\}",

year = "2001",

doi = "10.1080/10584580108016896",

language = "English",

volume = "35",

pages = "1881/151--1888/158",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Group",

number = "1-4",

note = "12th Interntional Symposium on Integrated Ferroelectrics ; Conference date: 12-03-2000 Through 15-03-2000",

}

TY - JOUR

T1 - Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films grown by MOCVD

AU - Baumann, P. K.

AU - Streiffer, S. K.

AU - Bai, G. R.

AU - Ghosh, K.

AU - Auciello, O.

AU - Thompson, C.

AU - Stemmer, S.

AU - Rao, R. A.

AU - Eom, C. B.

AU - Xu, F.

AU - Trolier-Mckinstry, S.

AU - Kim, D. J.

AU - Maria, J. P.

AU - Kingon, A. I.

PY - 2001

Y1 - 2001

N2 - Epitaxial Pb(Mg1/3Nb2/3)O3 (PMN) and (1-x)(Pb(Mg1/3Nb2/3)O3)-x (PbTiO3) (PMN-PT) thin films have been deposited by metalorganic chemical vapor deposition at 700 - 780°C on (100) SrTiO3 and SrRuO3/SrTiO3 substrates. Room temperature values of 900 and 1.5%, were measured for the zero-bias permittivity and loss respectively, at 10 kHz for 220 nm thick pure PMN films. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all samples. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with Pr≈18 μC/cm2 was obtained. Initial piezoresponse results are discussed.

AB - Epitaxial Pb(Mg1/3Nb2/3)O3 (PMN) and (1-x)(Pb(Mg1/3Nb2/3)O3)-x (PbTiO3) (PMN-PT) thin films have been deposited by metalorganic chemical vapor deposition at 700 - 780°C on (100) SrTiO3 and SrRuO3/SrTiO3 substrates. Room temperature values of 900 and 1.5%, were measured for the zero-bias permittivity and loss respectively, at 10 kHz for 220 nm thick pure PMN films. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all samples. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with Pr≈18 μC/cm2 was obtained. Initial piezoresponse results are discussed.

KW - Impurity phases

KW - MOCVD

KW - PMN-PT

KW - Piezoelectric properties

UR - https://www.scopus.com/pages/publications/0035041687

U2 - 10.1080/10584580108016896

DO - 10.1080/10584580108016896

M3 - Conference article

AN - SCOPUS:0035041687

SN - 1058-4587

VL - 35

SP - 1881/151-1888/158

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

T2 - 12th Interntional Symposium on Integrated Ferroelectrics

Y2 - 12 March 2000 through 15 March 2000

ER -

Epitaxial Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ thin films grown by MOCVD

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Keywords

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