Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films grown by MOCVD

P. K. Baumann; S. K. Streiffer; G. R. Bai; K. Ghosh; O. Auciello; C. Thompson; S. Stemmer; R. A. Rao; C. B. Eom; F. Xu; S. Trolier-Mckinstry; D. J. Kim; J. P. Maria; A. I. Kingon

doi:10.1080/10584580108016896

Epitaxial Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ thin films grown by MOCVD

P. K. Baumann, S. K. Streiffer, G. R. Bai, K. Ghosh, O. Auciello, C. Thompson, S. Stemmer, R. A. Rao, C. B. Eom, F. Xu, S. Trolier-Mckinstry, D. J. Kim, J. P. Maria, A. I. Kingon

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

Epitaxial Pb(Mg_1/3Nb_2/3)O₃ (PMN) and (1-x)(Pb(Mg_1/3Nb_2/3)O₃)-x (PbTiO₃) (PMN-PT) thin films have been deposited by metalorganic chemical vapor deposition at 700 - 780°C on (100) SrTiO₃ and SrRuO₃/SrTiO₃ substrates. Room temperature values of 900 and 1.5%, were measured for the zero-bias permittivity and loss respectively, at 10 kHz for 220 nm thick pure PMN films. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all samples. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with P_r≈18 μC/cm² was obtained. Initial piezoresponse results are discussed.

Original language	English
Pages (from-to)	1881/151-1888/158
Journal	Integrated Ferroelectrics
Volume	35
Issue number	1-4
DOIs	https://doi.org/10.1080/10584580108016896
State	Published - 2001
Externally published	Yes
Event	12th Interntional Symposium on Integrated Ferroelectrics - Aachen, Germany Duration: Mar 12 2000 → Mar 15 2000

Keywords

Impurity phases
MOCVD
Piezoelectric properties
PMN-PT

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10.1080/10584580108016896

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@article{4d47dc9ba44a45dca77a1c978cb55f7b,

title = "Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films grown by MOCVD",

abstract = "Epitaxial Pb(Mg1/3Nb2/3)O3 (PMN) and (1-x)(Pb(Mg1/3Nb2/3)O3)-x (PbTiO3) (PMN-PT) thin films have been deposited by metalorganic chemical vapor deposition at 700 - 780°C on (100) SrTiO3 and SrRuO3/SrTiO3 substrates. Room temperature values of 900 and 1.5%, were measured for the zero-bias permittivity and loss respectively, at 10 kHz for 220 nm thick pure PMN films. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all samples. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with Pr≈18 μC/cm2 was obtained. Initial piezoresponse results are discussed.",

keywords = "Impurity phases, MOCVD, Piezoelectric properties, PMN-PT",

author = "Baumann, {P. K.} and Streiffer, {S. K.} and Bai, {G. R.} and K. Ghosh and O. Auciello and C. Thompson and S. Stemmer and Rao, {R. A.} and Eom, {C. B.} and F. Xu and S. Trolier-Mckinstry and Kim, {D. J.} and Maria, {J. P.} and Kingon, {A. I.}",

year = "2001",

doi = "10.1080/10584580108016896",

language = "English",

volume = "35",

pages = "1881/151--1888/158",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Group",

number = "1-4",

note = "12th Interntional Symposium on Integrated Ferroelectrics ; Conference date: 12-03-2000 Through 15-03-2000",

}

TY - JOUR

T1 - Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films grown by MOCVD

AU - Baumann, P. K.

AU - Streiffer, S. K.

AU - Bai, G. R.

AU - Ghosh, K.

AU - Auciello, O.

AU - Thompson, C.

AU - Stemmer, S.

AU - Rao, R. A.

AU - Eom, C. B.

AU - Xu, F.

AU - Trolier-Mckinstry, S.

AU - Kim, D. J.

AU - Maria, J. P.

AU - Kingon, A. I.

PY - 2001

Y1 - 2001

N2 - Epitaxial Pb(Mg1/3Nb2/3)O3 (PMN) and (1-x)(Pb(Mg1/3Nb2/3)O3)-x (PbTiO3) (PMN-PT) thin films have been deposited by metalorganic chemical vapor deposition at 700 - 780°C on (100) SrTiO3 and SrRuO3/SrTiO3 substrates. Room temperature values of 900 and 1.5%, were measured for the zero-bias permittivity and loss respectively, at 10 kHz for 220 nm thick pure PMN films. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all samples. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with Pr≈18 μC/cm2 was obtained. Initial piezoresponse results are discussed.

AB - Epitaxial Pb(Mg1/3Nb2/3)O3 (PMN) and (1-x)(Pb(Mg1/3Nb2/3)O3)-x (PbTiO3) (PMN-PT) thin films have been deposited by metalorganic chemical vapor deposition at 700 - 780°C on (100) SrTiO3 and SrRuO3/SrTiO3 substrates. Room temperature values of 900 and 1.5%, were measured for the zero-bias permittivity and loss respectively, at 10 kHz for 220 nm thick pure PMN films. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all samples. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with Pr≈18 μC/cm2 was obtained. Initial piezoresponse results are discussed.

KW - Impurity phases

KW - MOCVD

KW - Piezoelectric properties

KW - PMN-PT

UR - http://www.scopus.com/inward/record.url?scp=0035041687&partnerID=8YFLogxK

U2 - 10.1080/10584580108016896

DO - 10.1080/10584580108016896

M3 - Conference article

AN - SCOPUS:0035041687

SN - 1058-4587

VL - 35

SP - 1881/151-1888/158

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

T2 - 12th Interntional Symposium on Integrated Ferroelectrics

Y2 - 12 March 2000 through 15 March 2000

ER -

Epitaxial Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ thin films grown by MOCVD

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Keywords

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