Epitaxial growth of TiSe2/TiO2 heterostructure

Tao Jia; Slavko N. Rebec; Shujie Tang; Kejun Xu; Hafiz M. Sohail; Makoto Hashimoto; Donghui Lu; Robert G. Moore; Zhi Xun Shen

doi:10.1088/2053-1583/aaeadf

Epitaxial growth of TiSe₂/TiO₂ heterostructure

Tao Jia, Slavko N. Rebec, Shujie Tang, Kejun Xu, Hafiz M. Sohail, Makoto Hashimoto, Donghui Lu, Robert G. Moore, Zhi Xun Shen

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Here we report that TiSe₂ thin films can be epitaxially grown on TiO₂ substrates despite different lattice symmetry between the two materials. The TiSe₂ thin films can be prepared on TiO₂ via molecular beam epitaxy (MBE) in two ways: by conventional co-deposition using selenium and titanium sources, and by evaporating just selenium on reconstructed surfaces of TiO₂. Both growth methods yield crystalline thin films with similar electronic band structures. TiSe₂ films on TiO₂ substrates exhibit large electron doping and a lack of charge density wave (CDW) order, which is different from both bulk single crystal TiSe₂ and TiSe₂ thin films on graphene. These phenomena can be explained by selenium vacancies in the TiSe₂ films, which naturally occur when these films are grown on TiO₂ substrates. Our successful growth of transition metal dichalcogenide (TMDC) films on a transition metal oxide (TMO) substrate provides a platform to further tune the electrical and optical properties of TMDC thin films.

Original language	English
Article number	011008
Journal	2D Materials
Volume	6
Issue number	1
DOIs	https://doi.org/10.1088/2053-1583/aaeadf
State	Published - Jan 2019
Externally published	Yes

Funding

We would like to thank B Moritz,C-J Jia,Y He,and S-D Chen for valuable discussions. This work is supported by the Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division, under Contract DE-AC02-76SF00515. Use of the Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, is supported by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, also under Contract No. DE-AC02-76SF00515.

Funders	Funder number
Office of Basic Energy Sciences
US Department of Energy
U.S. Department of Energy
Office of Science
Basic Energy Sciences
Division of Materials Sciences and Engineering	DE-AC02-76SF00515

Keywords

heterostructure
molecular beam epitaxy (MBE)
transition metal dichalcogenide (TMDC)
transition metal oxide (TMO)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1088/2053-1583/aaeadf

Cite this

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title = "Epitaxial growth of TiSe2/TiO2 heterostructure",

abstract = "Here we report that TiSe2 thin films can be epitaxially grown on TiO2 substrates despite different lattice symmetry between the two materials. The TiSe2 thin films can be prepared on TiO2 via molecular beam epitaxy (MBE) in two ways: by conventional co-deposition using selenium and titanium sources, and by evaporating just selenium on reconstructed surfaces of TiO2. Both growth methods yield crystalline thin films with similar electronic band structures. TiSe2 films on TiO2 substrates exhibit large electron doping and a lack of charge density wave (CDW) order, which is different from both bulk single crystal TiSe2 and TiSe2 thin films on graphene. These phenomena can be explained by selenium vacancies in the TiSe2 films, which naturally occur when these films are grown on TiO2 substrates. Our successful growth of transition metal dichalcogenide (TMDC) films on a transition metal oxide (TMO) substrate provides a platform to further tune the electrical and optical properties of TMDC thin films.",

keywords = "heterostructure, molecular beam epitaxy (MBE), transition metal dichalcogenide (TMDC), transition metal oxide (TMO)",

author = "Tao Jia and Rebec, {Slavko N.} and Shujie Tang and Kejun Xu and Sohail, {Hafiz M.} and Makoto Hashimoto and Donghui Lu and Moore, {Robert G.} and Shen, {Zhi Xun}",

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year = "2019",

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doi = "10.1088/2053-1583/aaeadf",

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AU - Jia, Tao

AU - Rebec, Slavko N.

AU - Tang, Shujie

AU - Xu, Kejun

AU - Sohail, Hafiz M.

AU - Hashimoto, Makoto

AU - Lu, Donghui

AU - Moore, Robert G.

AU - Shen, Zhi Xun

PY - 2019/1

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N2 - Here we report that TiSe2 thin films can be epitaxially grown on TiO2 substrates despite different lattice symmetry between the two materials. The TiSe2 thin films can be prepared on TiO2 via molecular beam epitaxy (MBE) in two ways: by conventional co-deposition using selenium and titanium sources, and by evaporating just selenium on reconstructed surfaces of TiO2. Both growth methods yield crystalline thin films with similar electronic band structures. TiSe2 films on TiO2 substrates exhibit large electron doping and a lack of charge density wave (CDW) order, which is different from both bulk single crystal TiSe2 and TiSe2 thin films on graphene. These phenomena can be explained by selenium vacancies in the TiSe2 films, which naturally occur when these films are grown on TiO2 substrates. Our successful growth of transition metal dichalcogenide (TMDC) films on a transition metal oxide (TMO) substrate provides a platform to further tune the electrical and optical properties of TMDC thin films.

AB - Here we report that TiSe2 thin films can be epitaxially grown on TiO2 substrates despite different lattice symmetry between the two materials. The TiSe2 thin films can be prepared on TiO2 via molecular beam epitaxy (MBE) in two ways: by conventional co-deposition using selenium and titanium sources, and by evaporating just selenium on reconstructed surfaces of TiO2. Both growth methods yield crystalline thin films with similar electronic band structures. TiSe2 films on TiO2 substrates exhibit large electron doping and a lack of charge density wave (CDW) order, which is different from both bulk single crystal TiSe2 and TiSe2 thin films on graphene. These phenomena can be explained by selenium vacancies in the TiSe2 films, which naturally occur when these films are grown on TiO2 substrates. Our successful growth of transition metal dichalcogenide (TMDC) films on a transition metal oxide (TMO) substrate provides a platform to further tune the electrical and optical properties of TMDC thin films.

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